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SDF360 Datasheets (8)

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Solitron Devices

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SDF360		Solitron Devices	VDS (V) =, Id Continuous Tc=25C (A) = 25, Idm Pulsed (A) = 100, RDS (On) (Ohms) =...	Scan	PDF	172.41KB	1
SDF360JEAS		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF	172.41KB	1
SDF360JEBU		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF	172.41KB	1
SDF360JECD		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF	172.41KB	1
SDF360JECU		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF	172.41KB	1
SDF360JEDD		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF	172.41KB	1
SDF360JEDS		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF	172.41KB	1
SDF360JEDU		Solitron Devices	N-CHANNEL ENHANCEMENT MOS FET	Scan	PDF	172.41KB	1

SDF360 Price and Stock

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Renesas Electronics Corporation


Renesas Electronics Corporation BOSDF36049GHV QF P80C16BIT MPU SINGLECHIP MICROCOMPUTER (Alt: DF36049GHV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Silica	BOSDF36049GHV				168	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SDF360 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PRODUCT C A T A L O G _ . ^ S l i t r o i l ogy,^ ,nc \K7 :{%f N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0.2 1Q 5DF360 SDF360 SDF360 5DF360 PARAMETER JEA JEB JEC JED • RUGGED PACKAGE •H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS	OCR Scan	5DF360 SDF360 5DF360	PDF
Contextual Info: PRODUCT CÂTÂlûi Æ iition N-CHANNEL ENHANCEMENT MOS FET 400V, 2 5 A , 0.21Q SDF360 SDF360 SDF360 SDF360 RGS=1.0Mn (1 ) RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE	OCR Scan	SDF360 MIL-S-19500 di/dt-100A/ 300cS. 03b0fc	PDF
Contextual Info: SDF360JEBVGSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55	Original	SDF360JEBVGSN	PDF
Contextual Info: SDF360JEAEHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55	Original	SDF360JEAEHU1N	PDF
Contextual Info: SDF360JEASGU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55	Original	SDF360JEASGU1N	PDF
Contextual Info: SDF360JEBSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55	Original	SDF360JEBSHD1N	PDF
Contextual Info: SDF360JECSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55	Original	SDF360JECSHD1N	PDF
Contextual Info: SDF360JECSHSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55	Original	SDF360JECSHSN	PDF
Contextual Info: SDF360JECSHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55	Original	SDF360JECSHU1N	PDF
Contextual Info: SDF360JECVHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55	Original	SDF360JECVHD1N	PDF
JEC 400 Abstract: N-Channel mosfet 400v 25A SDF360 1D-14a DIODE ED 99 Contextual Info: PRODUCT CÂTÂL ^ » l i t r o n DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0 .2 1 Q SDF360 SDF360 SDF360 SDF360 JEA JEB JEC JED FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS	OCR Scan	SDF360 SDF360 300nS. JEC 400 N-Channel mosfet 400v 25A 1D-14a DIODE ED 99	PDF