S9G67A Search Results
S9G67A Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| S9G67A |
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FET, Microwave Power GaAs FET Transistor, ID 3.5 A | Scan | 77.77KB | 2 | ||
| S9G67A |
|
MICROWAVE POWER GaAs FET | Scan | 77.77KB | 2 |
S9G67A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
S9G67AContextual Info: TOSHIBA MICROWAVE POWER GaAs FET Non-Matched MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G67A Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C Ì CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent |
OCR Scan |
S9G67A S9G67A | |
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Contextual Info: TOSHIBA MICROW AVE POW ER G a A s F E T N on -M atch ed MICROWAVE SEMICONDUCTOR S9G67A Preliminary TECHNICAL DATA 1. R F P E R FO R M A N C E SP E C IF IC A T IO N S CH A RA CTERISTICS SYM BOL Output Power at ldB Com pression Point PldB Power G ain at ldB |
OCR Scan |
S9G67A | |
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Contextual Info: TO SH IBA M I C R O WA V E P O W E R GaAs FET MICROWAVE SEMICONDUCTOR S9G67A T E C H N IC A L D A T A FEATURES : • HIGH ■NON-MATCHED POWER P1dB=35.5dBm ■ HIGH at 2. 7GHz ■HERMETICALLY GAIN G1dB=1OdB TYPE at SEALED PACKAGE 2 . 7 GHz RF PERFORMANCE SPECIFICATIONS |
OCR Scan |
S9G67A |