S9014-TA(RANGE:200-600)
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JCET Group
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S9014 NPN transistor in TO-92 package with 45 V collector-emitter voltage, 0.45 W power dissipation, DC current gain from 60 to 1000, and transition frequency of 150 MHz at 10 mA collector current. |
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MMBT5551-G(RANGE:200-300)
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JCET Group
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MMBT5551 NPN transistor in SOT-23 package, rated for 160V collector-emitter voltage, 600mA collector current, with 300mW power dissipation and DC current gain ranging from 100 to 300 at 5V VCE. |
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KTA1504(RANGE:200-400)
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JCET Group
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PNP transistor in SOT-23 package with -50 V collector-base and collector-emitter voltage, -150 mA collector current, 150 mW power dissipation, 70–400 DC current gain, and 80 MHz transition frequency. |
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D882(RANGE:200-400)
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JCET Group
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NPN transistor in SOT-89-3L package with 30V collector-emitter voltage, 3A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 60 to 400, suitable for general-purpose switching and amplification applications. |
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BC847(RANGE:200-450)
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JCET Group
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NPN transistor in SOT-23 package, suited for switching and audio frequency amplifier applications, with collector current up to 100 mA, collector-emitter voltage from 30 to 65 V, and DC current gain up to 800. |
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BC848B(RANGE:200-450)
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JCET Group
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NPN transistor in SOT-23 package, part of the BC846/BC847/BC848 series, with collector current up to 100 mA, collector-emitter voltage from 30 to 65 V, and DC current gain up to 800, suitable for switching and audio frequency amplifier applications. |
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2SC1008(RANGE:200-400)
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JCET Group
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NPN transistor in TO-92 package, rated for 60 V collector-emitter voltage, 700 mA collector current, with a DC current gain ranging from 40 to 400 and a transition frequency of 30 MHz. |
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3DD13005ND66(RANGE:20-30)
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JCET Group
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NPN transistor in TO-220-3L package with 700V collector-base breakdown voltage, 420V collector-emitter breakdown voltage, 4A continuous collector current, and high-speed switching capability. |
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S8550 2TY(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package, rated for collector current of -0.5A, collector-emitter voltage of -25V, with DC current gain up to 400 and transition frequency of 150MHz. |
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2SC4944(RANGE:200-400)
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JCET Group
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Dual NPN transistor in SOT-353 package with 60V collector-base voltage, 150mA continuous collector current, 200mW power dissipation, and DC current gain range of 120 to 400. |
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C1815(RANGE:200-400)
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JCET Group
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NPN transistor in SOT-23 package with 50V collector-emitter voltage, 150mA continuous collector current, 200mW power dissipation, and DC current gain ranging from 130 to 400. |
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SS8550(RANGE:200-350)
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JCET Group
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SS8550 PNP transistor in SOT-23 package with -40V collector-base voltage, -25V collector-emitter voltage, -1.5A collector current, 500mW power dissipation, and DC current gain ranging from 120 to 400. |
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BC547-TA(RANGE:200-450)
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JCET Group
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NPN transistors BC546, BC547, and BC548 in TO-92 package with high voltage ratings, featuring VCEO up to 65V, IC continuous 100mA, hFE from 110 to 800, and fT up to 150MHz. |
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2N3904-TA(RANGE:200-300)
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JCET Group
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NPN silicon epitaxial planar transistor in TO-92 package, rated for 40V collector-emitter voltage, 0.2A continuous collector current, with DC current gain up to 400 and transition frequency of 300MHz. |
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B772M(RANGE:200-400)
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JCET Group
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PNP transistor in TO-252-2L plastic package with -30V collector-emitter voltage, -3A continuous collector current, 1.25W power dissipation, and DC current gain ranging from 60 to 400. |
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S9012-G(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package with -25V collector-emitter voltage, -500mA collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400. |
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BC857S(RANGE:200-450)
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JCET Group
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BC857S is a dual PNP transistor in SOT-363 package with 45 V collector-emitter breakdown voltage, 200 MHz transition frequency, and DC current gain up to 630, designed for compact circuit applications. |
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KTC3198(RANGE:200-400)
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JCET Group
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NPN transistor in TO-92 package, rated for 60 V collector-base breakdown voltage, 50 V collector-emitter voltage, 150 mA continuous collector current, with a transition frequency of 80 MHz and DC current gain up to 700. |
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2SD1005(RANGE:200-400)
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JCET Group
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NPN transistor in SOT-89-3L package with 80V collector-emitter breakdown voltage, 1A collector current, high DC current gain linearity, and 160MHz transition frequency. |
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D882S-TA(RANGE:200-400)
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JCET Group
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NPN transistor in TO-92 package with collector-base voltage of 40 V, collector-emitter voltage of 30 V, emitter-base voltage of 6 V, continuous collector current of 3 A, and collector power dissipation of 625 mW. |
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S9014-TA(RANGE:200-600)
