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ISD 3000 Abstract: chengdu Contextual Info: CPEC RX60N06 RX60N06 Silicon N Channel Power MOSFET Description The RX60N06 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features •VDSS =60V ·ID =60A ·RDS on ＜7mΩ (VGS=10V)	Original	RX60N06 RX60N06 6TO-220 ISD 3000 chengdu	PDF

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ISD 3000

Abstract: chengdu
Contextual Info: CPEC RX60N06 RX60N06 Silicon N Channel Power MOSFET Description The RX60N06 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features •VDSS =60V ·ID =60A ·RDS on ＜7mΩ (VGS=10V)

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RX60N06 RX60N06 6TO-220 ISD 3000 chengdu

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