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    RN2112 Search Results

    RN2112 Datasheets (27)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    RN2112
    Toshiba PNP transistor Original PDF 265.82KB 5
    RN2112
    Toshiba Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Original PDF 178.74KB 5
    RN2112
    Toshiba Japanese - Transistors Original PDF 401.83KB 6
    RN2112,LF(CT
    Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - TRANS PREBIAS PNP 50V 0.1W SSM Original PDF 270.07KB
    RN2112ACT
    Toshiba Transistors Original PDF 152.25KB 6
    RN2112ACT
    Toshiba Japanese - Transistors Original PDF 251.08KB 6
    RN2112ACT
    Toshiba RN2112 - TRANSISTOR 80 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal Original PDF 254.26KB 5
    RN2112ACT(TPL3)
    Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRAN PNP CST3 50V 100A Original PDF 6
    RN2112CT
    Toshiba Transistors Original PDF 133.41KB 6
    RN2112CT
    Toshiba Japanese - Transistors Original PDF 259.88KB 6
    RN2112CT
    Toshiba RN2112 - TRANSISTOR 50 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP General Purpose Small Signal Original PDF 254.26KB 5
    RN2112CT(TPL3)
    Toshiba Transistors (BJT) - Single, Pre-Biased, Discrete Semiconductor Products, TRAN PNP CST3 -20V -50A Original PDF 6
    RN2112F
    Toshiba PNP transistor Original PDF 243.73KB 4
    RN2112F
    Toshiba RN2112 - TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Purpose Small Signal Original PDF 254.26KB 5
    RN2112FS
    Toshiba Original PDF 99.87KB 5
    RN2112FT
    Toshiba Original PDF 56.51KB 2
    RN2112FT
    Toshiba RN2112 - TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP General Purpose Small Signal Original PDF 254.26KB 5
    RN2112FV
    Toshiba Original PDF 269.4KB 5
    RN2112,LXHF(CT
    Toshiba Semiconductor and Storage AUTO AEC-Q SINGLE PNP Q1BSR=22K, Original PDF 396.82KB 7
    RN2112MFV
    Toshiba Transistors Original PDF 292.71KB 6
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    RN2112 Price and Stock

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    OMRON Corporation H3RN-21 12VDC

    Timer; 0,1min÷10h; DPST-NO; 250VAC/3A; 12VDC; H3RN; socket; PIN: 6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME H3RN-21 12VDC 1
    • 1 $84.44
    • 10 $73.40
    • 100 $73.40
    • 1000 $73.40
    • 10000 $73.40
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    Toshiba America Electronic Components RN2112(TE85L,F)

    Trans Digital BJT PNP 50V 100mA 3-Pin SSM T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical RN2112(TE85L,F) 2,950 1,516
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    • 10000 $0.05
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    Quest Components RN2112(TE85L,F) 2,360
    • 1 $0.33
    • 10 $0.33
    • 100 $0.15
    • 1000 $0.10
    • 10000 $0.10
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    Toshiba America Electronic Components RN2112MFV(TPL3)

    - Tape and Reel (Alt: RN2112MFV(TPL3))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RN2112MFV(TPL3) Tape & Reel 8,000
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    Mouser Electronics RN2112MFV(TPL3)
    • 1 $0.33
    • 10 $0.19
    • 100 $0.12
    • 1000 $0.07
    • 10000 $0.05
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    Toshiba America Electronic Components RN2112,LF(CT

    - Tape and Reel (Alt: RN2112,LF(CT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RN2112,LF(CT Tape & Reel 16 Weeks 3,000
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    • 10000 $0.03
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    Mouser Electronics RN2112,LF(CT
    • 1 $0.22
    • 10 $0.13
    • 100 $0.08
    • 1000 $0.05
    • 10000 $0.03
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    Toshiba America Electronic Components RN2112,LXHF(CT

    Transistor Digital BJT PNP 50V 100mA 3-Pin SOT-416 - Tape and Reel (Alt: RN2112,LXHF(CT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RN2112,LXHF(CT Tape & Reel 16 Weeks 3,000
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    Mouser Electronics RN2112,LXHF(CT
    • 1 $0.40
    • 10 $0.27
    • 100 $0.17
    • 1000 $0.10
    • 10000 $0.06
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    RN2112 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ic 2113

    Contextual Info: RN2112,2113 RN2112 U nit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 03 With. Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and M anufacturing Process Complementary to RN1112, RN1113


    OCR Scan
    rn2112rn1112rn1113rn2113+1ic 2113 PDF

    RN1112ACT

    Abstract: RN1113ACT RN2112ACT RN2113ACT
    Contextual Info: RN2112ACT,RN2113ACT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112ACT,RN2113ACT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original
    rn2112actrn2113actrn1112actrn1113act PDF

    RN1112FT

    Abstract: RN1113FT RN2112FT RN2113FT
    Contextual Info: RN2112FT,RN2113FT 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112FT, RN2113FT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用


    Original
    rn2112ftrn2113ftrn1112ftrn1113ft PDF

    RN1113F

    Abstract: RN2112F RN2113F RN1112F
    Contextual Info: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    rn2112frn2113frn1112frn1113f PDF

    RN1112F

    Abstract: RN1113F RN2112F RN2113F
    Contextual Info: RN2112F,RN2113F 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2112F,RN2113F ○ スイッチング用 ○ インバータ回路 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm


    Original
    rn2112frn2113frn1112frn1113frn1112f+1rn1113f PDF

    Contextual Info: T O SH IB A RN2112,RN2113 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112, RN2113 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 0.8 ± 0.1 With Built-in Bias Resistors


    OCR Scan
    rn2112rn2113rn1112rn1113 PDF

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Contextual Info: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enables the manufacture of ever more


    Original
    rn2112fsrn2113fsrn1112fsrn1113fs PDF

    Contextual Info: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV


    Original
    rn1112mfvrn1113mfvrn2112mfvrn2113mfvmitation PDF

    Contextual Info: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.


    Original
    rn2112mfvrn2113mfvrn1112mfvrn1113mfv PDF

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Contextual Info: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications A wide range of resistor values is available for use in various circuits.


    Original
    rn2112mfvrn2113mfvrn1112mfvrn1113mfv PDF

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Contextual Info: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2112FS, RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.2±0.05 0.15±0.05 Equivalent Circuit and Bias Resistor Values


    Original
    rn2112fsrn2113fsrn1112fsrn1113fs PDF

    RN1112FT

    Abstract: RN1113FT RN2112FT RN2113FT
    Contextual Info: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original
    rn2112ftrn2113ftrn1112ftrn1113ft PDF

    toshiba inverter

    Abstract: RN1112FV RN1113FV RN2112FV RN2113FV
    Contextual Info: RN2112FV,RN2113FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112FV, RN2113FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm 0.22±0.05 Simplified circuit design Reduced quantity of parts and manufacturing process


    Original
    rn2112fvrn2113fvrn1112fvrn1113fv+1toshiba inverter PDF

    RN1112F

    Abstract: RN1113F RN2112F RN2113F
    Contextual Info: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    rn2112frn2113frn1112frn1113f PDF

    Contextual Info: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process


    Original
    rn2112frn2113frn1112frn1113f PDF

    Contextual Info: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112MFV,RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22±0.05 A wide range of resistor values is available for use in various circuits.


    Original
    rn2112mfvrn2113mfvrn1112mfvrn1113mfv PDF

    RN2112FT

    Abstract: RN1112FT RN1113FT RN2113FT
    Contextual Info: RN2112FT,RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FT,RN2113FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin


    Original
    rn2112ftrn2113ftrn1112ftrn1113ft PDF

    Contextual Info: RN2112F,RN2113F T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112F, RN2113F Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design


    OCR Scan
    rn2112frn2113frn1112frn1113f PDF

    Contextual Info: RN2112FS,RN2113FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2112FS,RN2113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • 0.6±0.05 Reducing the parts count enable the manufacture of ever more


    Original
    rn2112fsrn2113fsrn1112fsrn1113fs PDF

    RN1112

    Abstract: RN1113 RN2112 RN2113
    Contextual Info: RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112,RN2113 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


    Original
    rn2112rn2113rn1112rn1113 PDF

    Contextual Info: RN2112F,RN2113F T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS R N'm 7 1 1 7 F g R N'm 7 1 1 3 F • m■ ■ ■ m■ ■ ■ w ■ SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


    OCR Scan
    rn2112frn2113frn1112frn1113f PDF

    Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: RN2112ACT Category: Transistors /Bipolar Small-Signal Transistors/Bias Resistor Built-in Transistors Single


    Original
    rn2112actrn1112act16-apr-09 PDF

    Contextual Info: RN2112F,RN2113F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112F,RN2113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process


    Original
    rn2112frn2113frn1112frn1113f PDF

    RN1112

    Abstract: RN1113 RN2112 RN2113
    Contextual Info: RN2112,RN2113 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2112, RN2113 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm z Built-in bias resistors z Simplified circuit design z Fewer parts and simplified manufacturing process


    Original
    rn2112rn2113rn1112rn1113 PDF