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RJL6015DPK Datasheets (1)

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Renesas Electronics

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJL6015DPK-00#T0		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 19A TO3P	Original	PDF		7

RJL6015DPK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJL6015DPK R07DS0815EJ0200 Previous: REJ03G1818-0100 Rev.2.00 Jun 21, 2012 600V - 19A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.34  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25C)	Original	RJL6015DPK R07DS0815EJ0200 REJ03G1818-0100) PRSS0004ZE-A	PDF
PRSS0004ZE-A Abstract: RJL6015DPK-00-T0 SC-65 Contextual Info: RJL6015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1818-0100 Rev.1.00 Sep 11, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A	Original	RJL6015DPK REJ03G1818-0100 PRSS0004ZE-A PRSS0004ZE-A RJL6015DPK-00-T0 SC-65	PDF
Contextual Info: Preliminary Datasheet RJL6015DPK R07DS0815EJ0200 Previous: REJ03G1818-0100 Rev.2.00 Jun 21, 2012 600V - 19A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.34  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25C)	Original	RJL6015DPK R07DS0815EJ0200 REJ03G1818-0100) PRSS0004ZE-A	PDF
PRSS0004ZE-A Abstract: RJL6015DPK-00-T0 SC-65 Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF