RFP4N35, Search Results
RFP4N35, Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| RFP4N35 |
|
4A, 350V and 400V, 2.000 ?, N-Channel Power MOSFETs | Original | 39.43KB | 4 | ||
| RFP4N35 |
|
Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| RFP4N35 |
|
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V, | Scan | 208.78KB | 4 | ||
| RFP4N35 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | 229.72KB | 4 | ||
| RFP4N35 | International Rectifier | RF and BUZ Series Power MOSFETs - N-Channel | Scan | 40.6KB | 1 | ||
| RFP4N35 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 119.33KB | 1 | ||
| RFP4N35 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 82.82KB | 1 |
RFP4N35, Price and Stock
Harris Semiconductor
Harris Semiconductor RFP4N35Power Field-Effect Transistor, 4A I(D), 350V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RFP4N35 | 400 | 1 |
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Buy Now | ||||||