BC327(RANGE:160-400)
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JCET Group
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BC327/BC328 PNP transistors in TO-92 package with maximum collector current of -800 mA, collector-emitter voltage up to -45 V, power dissipation 625 mW, and DC current gain ranging from 100 to 630. |
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8550S-TA(RANGE:160-300)
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JCET Group
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PNP transistor in TO-92 package with VCEO of -25V, IC of -500mA, hFE range 85-400, and excellent hFE linearity, suitable for general-purpose switching and amplification applications. |
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8050SS(RANGE:160-300)
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JCET Group
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NPN transistor in TO-92 package, with collector current up to 1.5 A, collector-emitter voltage of 25 V, and DC current gain (hFE) ranging from 85 to 300, suitable for general purpose switching and amplification applications. |
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M8550(RANGE:160-300)
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JCET Group
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M8550 PNP transistor in TO-92 package with -25V collector-emitter voltage, -800mA continuous collector current, 625mW power dissipation, and DC current gain up to 400. |
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B772M(RANGE:160-320)
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JCET Group
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PNP transistor in TO-252-2L package with -30V collector-emitter voltage, -3A continuous collector current, 1.25W power dissipation, and DC current gain ranging from 60 to 400. |
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BC807-25(RANGE:160-400)
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JCET Group
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PNP transistor in SOT-23 package with -45 V collector-emitter voltage, -0.5 A continuous collector current, 0.3 W power dissipation, and DC current gain ranging from 100 to 600 depending on rank. |
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SS8050(RANGE:160-300)
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JCET Group
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NPN transistor in TO-92 package with 1.5 A continuous collector current, 25 V collector-emitter breakdown voltage, 100 MHz transition frequency, and DC current gain (hFE) ranging from 85 to 400, suitable for general-purpose switching and amplification applications. |
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S8550-TA(RANGE:160-300)
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JCET Group
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S8550, a TO-92 plastic-encapsulated PNP transistor, with collector-base voltage -40 V, collector-emitter voltage -25 V, emitter-base voltage -5 V, continuous collector current -0.5 A, and collector power dissipation 625 mW. |
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2SC2884(RANGE:160-320)
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JCET Group
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NPN transistor in SOT-89-3L package with 30V collector-emitter voltage, 800mA collector current, high DC current gain (100–320), 500mW power dissipation, and transition frequency of 120MHz. |
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BC337-25-TA(RANGE:160-400)
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JCET Group
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NPN transistor in TO-92 package with collector current up to 800 mA, collector-emitter voltage up to 45 V, DC current gain up to 630, and transition frequency of 210 MHz. |
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KTC4376(RANGE:160-320)
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JCET Group
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NPN transistor in SOT-89-3L package with 30V collector-emitter voltage, 800mA collector current, 500mW power dissipation, and DC current gain ranging from 100 to 320. |
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KTA1298(RANGE:160-320)
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JCET Group
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PNP transistor in SOT-23 package, with VCEO -30V, IC -0.8A, hFE 100-320, fT 120MHz, suitable for low frequency power amplification and power switching applications. |
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2SC536N(RANGE:160-320)
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JCET Group
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NPN transistor in TO-92 package with 50 V collector-emitter voltage, 150 mA collector current, 625 mW power dissipation, and 200 MHz transition frequency, suitable for low to high frequency applications. |
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KTC4375(RANGE:160-320)
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JCET Group
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NPN transistor in SOT-89-3L package with 30 V collector-base and collector-emitter voltage, 1.5 A continuous collector current, 0.5 W power dissipation, and DC current gain ranging from 100 to 320. |
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2SC2883(RANGE:160-320)
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JCET Group
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NPN transistor in SOT-89-3L package with 30 V collector-base and collector-emitter voltage, 1.5 A continuous collector current, 100-320 DC current gain, and 120 MHz transition frequency. |
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D882(RANGE:160-320)
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JCET Group
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NPN transistor in TO-126 package with 30 V collector-emitter voltage, 3 A continuous collector current, 1.25 W power dissipation, and DC current gain ranging from 60 to 400. |
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M8050(RANGE:160-300)
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JCET Group
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NPN transistor in TO-92 package with 40V collector-base voltage, 25V collector-emitter voltage, 800mA continuous collector current, and 625mW power dissipation at 25°C ambient temperature. |
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2SA1013-TA(RANGE:160-320)
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JCET Group
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PNP transistor in TO-92L package with -160V collector-base and collector-emitter voltage, continuous collector current up to -1A, DC current gain ranging from 60 to 320, and transition frequency of 15MHz. |
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2SA966(RANGE:160-320)
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JCET Group
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PNP transistor in TO-92L package, rated for -30 V collector-base and collector-emitter voltage, -1.5 A continuous collector current, 0.9 W power dissipation, with DC current gain from 100 to 320 and transition frequency of 120 MHz. |
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S8050(RANGE:160-300)
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JCET Group
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NPN transistor in TO-92 package with collector current of 0.5A, collector-emitter voltage of 25V, DC current gain up to 400, and transition frequency of 150MHz. |
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BC327(RANGE:160-400)