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Contextual Info: Data Sheet HAT1111C R07DS1177EJ0700 Previous: REJ03G0446-0600 Rev.7.00 Mar 19, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = –10 V) • Low drive current. • 4.5 V gate drive devices. • High density mounting |
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HAT1111C R07DS1177EJ0700 REJ03G0446-0600) PWSF0006JA-A VDSS2886-9022/9044 |