R07DS0359EJ0200 Search Results
R07DS0359EJ0200 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RJL5013DPE R07DS0359EJ0200 Previous: REJ03G1755-0100 Rev.2.00 Apr 18, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) |
Original |
RJL5013DPE R07DS0359EJ0200 REJ03G1755-0100) PRSS0004AE-B | |
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Contextual Info: Preliminary Datasheet RJL5013DPE R07DS0359EJ0200 Previous: REJ03G1755-0100 Rev.2.00 Apr 18, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) |
Original |
RJL5013DPE R07DS0359EJ0200 REJ03G1755-0100) PRSS0004AE-B |