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R07DS0293EJ0500 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RQJ0204XGDQA R07DS0293EJ0500 Rev.5.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS on = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive |
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RQJ0204XGDQA R07DS0293EJ0500 PLSP0003ZB-A |