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    Contextual Info: Preliminary Datasheet RJL5020DPK R07DS0239EJ0500 Previous: REJ03G1733-0400 Rev.5.00 Jan 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.105  typ. (at ID = 19 A, VGS = 10 V, Ta = 25C)


    Original     		RJL5020DPK R07DS0239EJ0500 REJ03G1733-0400) PRSS0004ZE-A Channe9044 PDF

    PRSS0004ZE-A

    Abstract: RJL5020DPK RJL5020DPK-00-T0 SC-65
    Contextual Info: Preliminary Datasheet RJL5020DPK R07DS0239EJ0500 Previous: REJ03G1733-0400 Rev.5.00 Jan 07, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.105  typ. (at ID = 19 A, VGS = 10 V, Ta = 25C)


    Original     		RJL5020DPK R07DS0239EJ0500 REJ03G1733-0400) PRSS0004ZE-A Chan9044 PRSS0004ZE-A RJL5020DPK RJL5020DPK-00-T0 SC-65 PDF