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Q1-200
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International Diode
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10mA Iout, 1.0V Vrrm Fast Recovery Rectifier |
Scan |
PDF
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108.05KB |
3 |
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Q1-200
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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122.22KB |
1 |
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Q1-200A
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International Diode
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20mA Iout, 1.0V Vrrm Fast Recovery Rectifier |
Scan |
PDF
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108.05KB |
3 |
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Q1-200A
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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122.22KB |
1 |
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Q1-200B
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International Diode
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30mA Iout, 1.0V Vrrm Fast Recovery Rectifier |
Scan |
PDF
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108.05KB |
3 |
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Q1-200B
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Unknown
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Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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122.22KB |
1 |
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Q1-2-01-MS50FT
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Qualtek Electronics
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Heat Shrink Tubing, Cables, Wires - Management, HEATSHRINK 2"-50' BLACK |
Original |
PDF
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1 |
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Q1-2-01-QB48IN-5
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Qualtek Electronics
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Heat Shrink Tubing, Cables, Wires - Management, HEATSHRINK 2"-48" BLACK |
Original |
PDF
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1 |
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Q1-2-01-QB6IN-3
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Qualtek Electronics
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Heat Shrink Tubing, Cables, Wires - Management, HEATSHRINK 2"-6" BLACK |
Original |
PDF
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1 |
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Q1-2-01-SS100FT
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Qualtek Electronics
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Heat Shrink Tubing, Cables, Wires - Management, HEATSHRINK 2"-100' BLACK |
Original |
PDF
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1 |
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Q120.28x28 Package
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Intersil
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120 LEAD METRIC PLASTIC QUAD FLATPACK PACKAGE |
Original |
PDF
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17.27KB |
1 |
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Q-120B-R
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Mean Well
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PWR SPLY,SW,ENCL,120W,5V@11A 12V@4A,-5V@1A,-12V@1A,UL/CUL/T |
Original |
PDF
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695.03KB |
2 |
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Q-120D-R
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Mean Well
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PWR SPLY,SW,ENCL,124W,5V@8A, 12V@2A,24V@2A,-12@1A,UL/CULTUV |
Original |
PDF
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695.03KB |
2 |
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Q120RA-US-AF
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Banner Engineering
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R-GAGE SERIES RADAR SENSORBI |
Original |
PDF
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434.8KB |
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Q120RA-US-AF2Q
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Banner Engineering
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R-GAGE SERIES RADAR SENSORBI |
Original |
PDF
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434.8KB |
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JMTQ120C03D
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Jiangsu JieJie Microelectronics Co Ltd
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N-Channel and P-Channel enhancement mode MOSFET in PDFN3x3-8L-D package, 30V/11A N-channel with RDS(on) < 16mΩ at VGS=10V, -30V/-11A P-channel with RDS(on) < 27mΩ at VGS=-10V, suitable for power management and load switching. |
Original |
PDF
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JMTQ120N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 18A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 11.8mΩ at VGS=10V and 19.1mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in PDFN3x3-8L package. |
Original |
PDF
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JMTQ120N03D
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 15A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 14.3m ohm at VGS=10V and 21.7m ohm at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN3x3-8L package. |
Original |
PDF
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JMTQ120C03D
