PU431 Search Results

Contextual Info: Power Transistor Arrays PUB4311 PU4311 Silicon NPN/PNP planar type For power amplification Unit: mm • Features 25.3±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±60 V Collector-emitter voltage (Base open) VCEO ±60 V Emitter-base voltage (Collector open)

Contextual Info: Power Transistor Arrays PU4316 PU4316 Silicon NPN/PNP Epitaxial Planar Type Package D im ensions Pow er A m plifier, Sw itching U nit: m m I Features 5 m ay 4.2ma x. H igh D C c u rre n g gain ht t and good lin earity H igh c o lle c to r-e m itte r v o ltag e (Veto)

Contextual Info: Power Transistor Arrays PUB4314 PU4314 Silicon NPN/PNP planar type For low-voltage switching Unit: mm • Features 25.3±0.2 4.0±0.2 ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±40 V Collector-emitter voltage (Base open)

IC 2832

Abstract: PU4313 6 "transistor arrays" ic j7h transistor
Contextual Info: PU4313 P o w e r T ra n sisto r A rrays PU4313 Silicon NPN/PNP Epitaxial Planar Type • Package Dimensions Power Amplifier, Switching ■ Features • L o w c o l l e c to r - e m itte r s a tu r a t io n v o lta g e VcE<sat • G o o d lin e a r ity o f D C c u r r e n t g a in

DARLINGTON TRANSISTOR ARRAYS 2A

Abstract: PNP DARLINGTON ARRAYS 60V transistor npn ic2a DARLINGTON ARRAYS PNP PU4319 6 "transistor arrays" ic "Darlington Transistor" PANASONIC
Contextual Info: Power Transistor Arrays PU4319 PU4319 Package D im ensions Silicon NPN/PNP Planar Darlington Type Power A m plifie r, Sw itching • Features • H igh D C c u r re n t gain It f e • High s p e e d sw itch in g • 2 N P N e le m e n ts + 2 P N P e le m e n ts

Contextual Info: Power Transistor Arrays PU4314 PU4314 Silicon N P N /P N P Epitaxial Planar Type Package D im ensions Power A m plifier, S w itching • Features • Low collector-em itter saturation voltage Vu-isao • Good linearity of DC current gain (hFE) • High speed switching

60V transistor npn ic2a

Abstract: PNP DARLINGTON ARRAYS DARLINGTON TRANSISTOR ARRAYS 2A PU4319 6 "transistor arrays" ic Transistor Arrays
Contextual Info: Pow er T ransistor A rrays PU4319 PU4319 • Package D im ensions Silicon NPN/PNP Planar Darlington Type Pow er A m plifie r, S w itching ■ Features • H igh D C c u r re n t gain hpc • High sp e e d sw itch in g • 2 N P N e le m e n ts + 2 P N P e le m e n ts

Contextual Info: Power Transistor Arrays PUB4314 PU4314 Silicon NPN/PNP planar type For low-voltage switching Unit: mm • Features 25.3±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±40 V Collector-emitter voltage (Base open) VCEO ±20 V

PU4311

Abstract: PUB4311
Contextual Info: Power Transistor Arrays PUB4311 PU4311 Silicon NPN/PNP planar type For power amplification Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

ic pu4310

Abstract: PU4310 transistor C1505
Contextual Info: Power Transistor Arrays PU4310 PU4310 Silicon NPN/PNP Epitaxial Planar Type P ack age D im ension s P ow e r A m plifier, S w itch ing U n it: m m • Fe a tu res 25.5max. • H igh DC c u r re n t gain hFE and good lin e a rity 4.2max. • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e (VcEuau)

Contextual Info: Power Transistor Arrays PU4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type Package Dimensions Power Amplifier, Switching • Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEisatj • G ood lin earity o f DC cu rre n t gain (Iife )

PU4311

Contextual Info: Power Transistor Arrays PU4311 PU4311 Silicon NPN/PNP Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r A m p lifie r, S w itc h in g Unit! m m • F e a tu re s 4.2max. 25.5max. • H igh DC c u r re n t gain hFt , and good lin earity • L ow c o lle c to r-e m itte r sa tu ra tio n v o ltag e (V cecmd)

ic pu4310

Abstract: PU4310
Contextual Info: Power Transistor Arrays PU4310 PU4310 Silicon NPN/PNP Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r Amplifier, Switchin g Unit: mm • F e a tu re s • High DC cu rre n t gain Iif e 4.2max. 25^5 max. and good linearity • Low collector-em itter saturation voltage (VcEisau)

Contextual Info: Power Transistor Arrays PUB4310 PU4310 Silicon NPN/PNP planar type For power amplification Unit: mm • Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • NPN 2 elements + PNP 2 elements

PU4311

Abstract: transistor C1505
Contextual Info: Power Transistor Arrays PU431i PU4311 Silicon NPN/PNP Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r A m p lifie r, S w itc h in g U n i t : mm • F eatu res 25.5max. 4.2max. • High DC c u rre n t gain hFt , and good lin earity • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e (V ceimo)

PU4312

Abstract: PU4424 PU4215 PU4216 PU4219 PU4220 PU4310 PU4313 PU4314 PU4319
Contextual Info: - 322 - m m. Ta=25‘C , *EPIiTc= 25'C M PU4215 PU4216 PU4219 PU4220 PU4310 PÜ4311 PU4312 PU4313 PU4314 PU4S16 PU4319 PU4320 PU4325 PU4410 PTTA^I 1 PU4412 PD4413 PU4414 PU4416 PU4417 PU4418 PÜ4419 PU4420 PU4421 PU4422 PU4423 PU4424 PÜ4510 PU4511 PU4512

PU4314

Abstract: PUB4314
Contextual Info: Power Transistor Arrays PUB4314 PU4314 Silicon NPN/PNP planar type For low-voltage switching Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

Contextual Info: Power Transistor Arrays PU4313 PU4313 Silicon NPN/PNP Epitaxial Planar Type • Package Dimensions Power Amplifier, Switching ■ Features • L o w c o l le c to r - e m itte r s a t u r a t i o n v o lta g e VcE<8at • G o o d lin e a r ity o f D C c u r r e n t g a in

PU4312

Abstract: 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays P U4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r A m p lifier, S w itch in g • F e a tu re s • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcEtsao • G ood lin earity o f DC c u r re n t gain (Iife )

Contextual Info: Power Transistor Arrays PUB4310 PU4310 Silicon NPN/PNP planar type For power amplification Unit: mm • Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • NPN 2 elements + PNP 2 elements

matsushita pnp

Abstract: PU4314 PUB4314
Contextual Info: Power Transistor Arrays PUB4314 PU4314 Silicon NPN/PNP planar type For low-voltage switching Unit: mm • Features 9.5±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ±40 V Collector-emitter voltage (Base open) VCEO ±20 V Emitter-base voltage (Collector open)

Contextual Info: Power Transistor Arrays PU4310 PU4310 Silicon NPN/PNP Epitaxial Planar Type Package Dim ensions Power A m plifier, S w itching U n it: m m • Features 25.5max. • H igh DC c u r re n t gain hFE and good lin e a rity 4.2max. • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e (VcEuau)

PU4314

Abstract: npn switching transistor Ic 5A 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU4314 PU4314 Silicon NPN/PNP Epitaxial Planar Type Package Dimensions Power Amplifier, Switching • Features • • • • L ow c o lle cto r -e m itter saturation v o lta g e Vc^sau G ood linearity of DC curren t gain (hFE) H igh sp e e d sw itch in g

10T25

Abstract: ic 400ma, npn transistor PU4316 6 "transistor arrays" ic Transistor FT NPN 4V 5mA
Contextual Info: Power Transistor Arrays PU431Ó PU4316 S ilicon N P N /PN P E pitaxial P lanar Type P o w e r Amplifier, S w itching P a c k a g e D im e n s io n s I F e a tu re s High DC curreng gain htt. and good linearity High collector-em itter voltage (Vu,o) 2 N P N elem en ts + 2 PNP elem en ts