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PTFA182001E Datasheets (1)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFA182001E		Infineon Technologies	1800 MHz to 2000 MHz; Package: PG:H-30260-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,805.0 - 1,880.0 MHz; P_1dB (typ): 200.0 W; Supply Voltage: 30.0 V	Original	PDF	254.44KB	10

PTFA182001E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10 ohms potentiometer Abstract: 08051J100GBTTR BCP56 LM7805 PTFA182001E RO4350 Contextual Info: PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output	Original	PTFA182001E PTFA182001E 200-watt 10 ohms potentiometer 08051J100GBTTR BCP56 LM7805 RO4350	PDF

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10 ohms potentiometer

Abstract: 08051J100GBTTR BCP56 LM7805 PTFA182001E RO4350
Contextual Info: PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output

Original

PTFA182001E PTFA182001E 200-watt 10 ohms potentiometer 08051J100GBTTR BCP56 LM7805 RO4350

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