PNZ123S Search Results

Contextual Info: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package

"Photo Interrupter" Application Note

Abstract: LN62S PN123S PNZ123S
Contextual Info: Phototransistors PNZ123S PN123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.)

Contextual Info: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.2 4.1±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package

PNZ123S

Abstract: PN123S
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ123S (PN123S) Silicon planar type For optical control systems • Features  High sensitivity  Low collector-emitter cutoff current (base open)  Fast response: tr = 3 s (typ.)

LN62S

Abstract: PNZ123S
Contextual Info: Phototransistors PNZ123S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 Can be combined with LN62S to form an photo interrupter Features 4.1±0.3 2.0±0.2 For optical control systems 12.5 min. High sensitivity Low dark current Fast response : tr = 3.5 µs typ.

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

PNZ335

Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)