PMBFJ170 |
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Shortform IC and Component Datasheets (Plus Cross Reference Data) |
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PMBFJ174 |
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NXP Semiconductors
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PMBFJ174 - P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 20 to 135 mA; IDSS max.: 135 mA; IDSS min.: 20 mA; IG: 50 mA; IG: 50 ; RDS(on): 85 Ohm; toff: 15 ns; toff: 15 ns; ton: 7 ns; ton: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; VDSmax: 30 V |
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PMBFJ174 |
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Philips Semiconductors
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P-Channel Silicon Field-Effect Transistor |
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PMBFJ174 |
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Philips Semiconductors
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P-Channel Silicon Field-Effect Transistor |
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PMBFJ174,215 |
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NXP Semiconductors
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 20 to 135 mA; IDSS max.: 135 mA; IDSS min.: 20 mA; IG: 50 mA; IG: 50 ; RDS(on): 85 Ohm; toff: 15 ns; toff: 15 ns; ton: 7 ns; ton: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
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PMBFJ174,215 |
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NXP Semiconductors
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PMBFJ174 - TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SOT-23, 3 PIN, FET General Purpose Small Signal |
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PMBFJ174 to 177 |
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Philips Semiconductors
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P-channel silicon field-effect transistors |
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PMBFJ174T/R |
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NXP Semiconductors
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 20 to 135 mA; IDSS max.: 135 mA; IDSS min.: 20 mA; IG: 50 mA; IG: 50 ; RDS(on): 85 Ohm; toff: 15 ns; toff: 15 ns; ton: 7 ns; ton: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; VDSmax: 30 V |
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PMBFJ174T/R |
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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PMBFJ175 |
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NXP Semiconductors
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PMBFJ175 - P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 7 to 70 mA; IDSS max.: 70 mA; IDSS min.: 7 mA; IG: 50 mA; IG: 50 ; RDS(on): 125 Ohm; toff: 30 ns; toff: 30 ns; ton: 15 ns; ton: 15 ns; -V(P)GS: 3 to 6 V; -V(P)GS MAX: 6 V; -V(P)GS MIN: 3 V; VDSmax: 30 V |
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PMBFJ175 |
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Philips Semiconductors
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P-Channel Silicon Field-Effect Transistor |
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PMBFJ175 |
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Philips Semiconductors
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P-Channel Silicon Field-Effect Transistor |
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PMBFJ175,215 |
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NXP Semiconductors
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 7 to 70 mA; IDSS max.: 70 mA; IDSS min.: 7 mA; IG: 50 mA; IG: 50 ; RDS(on): 125 Ohm; toff: 30 ns; toff: 30 ns; ton: 15 ns; ton: 15 ns; -V(P)GS: 3 to 6 V; -V(P)GS MAX: 6 V; -V(P)GS MIN: 3 V; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
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PMBFJ175,215 |
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NXP Semiconductors
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PMBFJ175 - TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SOT-23, 3 PIN, FET General Purpose Small Signal |
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PMBFJ175T/R |
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NXP Semiconductors
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 7 to 70 mA; IDSS max.: 70 mA; IDSS min.: 7 mA; IG: 50 mA; IG: 50 ; RDS(on): 125 Ohm; toff: 30 ns; toff: 30 ns; ton: 15 ns; ton: 15 ns; -V(P)GS: 3 to 6 V; -V(P)GS MAX: 6 V; -V(P)GS MIN: 3 V; VDSmax: 30 V |
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PMBFJ175T/R |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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PMBFJ176 |
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NXP Semiconductors
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PMBFJ176 - P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 2 to 35 mA; IDSS max.: 35 mA; IDSS min.: 2 mA; IG: 50 mA; IG: 50 ; RDS(on): 250 Ohm; toff: 35 ns; toff: 35 ns; ton: 35 ns; ton: 35 ns; -V(P)GS: 1 to 4 V; -V(P)GS MAX: 4 V; -V(P)GS MIN: 1 V; VDSmax: 30 V |
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PMBFJ176 |
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Philips Semiconductors
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P-Channel Silicon Field-Effect Transistor |
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PMBFJ176 |
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Philips Semiconductors
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P-Channel Silicon Field-Effect Transistor |
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PMBFJ176,215 |
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NXP Semiconductors
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 2 to 35 mA; IDSS max.: 35 mA; IDSS min.: 2 mA; IG: 50 mA; IG: 50 ; RDS(on): 250 Ohm; toff: 35 ns; toff: 35 ns; ton: 35 ns; ton: 35 ns; -V(P)GS: 1 to 4 V; -V(P)GS MAX: 4 V; -V(P)GS MIN: 1 V; VDSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd |
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