PHN210T |
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NXP Semiconductors
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PHN210T - Dual N-channel enhancement mode TrenchMOS transistor - Configuration: Dual N-channel ; ID DC: 3.4 A; Qgd (typ): 0.7 nC; RDS(on): 100@10V200@4.5V mOhm; VDSmax: 30 V |
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PHN210T |
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Philips Semiconductors
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Dual N-channel enhancement mode |
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PHN210T,118 |
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NXP Semiconductors
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PHN210 - TRANSISTOR 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SOP-8, FET General Purpose Power |
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PHN210T,118 |
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NXP Semiconductors
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Dual N-channel enhancement mode TrenchMOS transistor - Configuration: Dual N-channel ; ID DC: 3.4 A; Qgd (typ): 0.7 nC; RDS(on): 100@10V200@4.5V mOhm; VDSmax: 30 V; Package: SOT96-1 (SO8); Container: Tape reel smd |
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PHN210/T3 |
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Philips Semiconductors
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Transistor Mosfet N-CH 30V 3.4A 8SO-8 T/R |
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PHN210T/R |
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Philips Semiconductors
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Transistor Mosfet N-CH 30V 2.8A 8SOT-96-1 T/R |
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PHN210T/R |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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PHN210T/T3 |
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Philips Semiconductors
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Transistor Mosfet N-CH 30V 3.4A 8SOT-96-1 T/R |
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