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    PD45128841G5 Search Results

    PD45128841G5 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PD45128841G5-A10-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    PD45128841G5-A10I-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A10LI-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A10LT-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A10T-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A75-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    PD45128841G5-A75A-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    PD45128841G5-A75I-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A75L-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    PD45128841G5-A75LI-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A75LT-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A75T-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A80-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    PD45128841G5-A80I-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A80L-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL Original PDF
    PD45128841G5-A80LI-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A80LT-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF
    PD45128841G5-A80T-9JF Elpida Memory 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) Original PDF

    PD45128841G5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD23C64020

    Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
    Text: IC Memory CD-ROM IC Memory CD-ROM X13769XJ2V0CD00 04-1 IC Memory Dynamic RAM • Synchronous DRAM: SDR Single Data Rate , 256M bits (x4 bits organization) Density (bits) Organization (words × bits × banks) Part number 256M★ 16M×4×4 µ PD45256441 Speed


    Original
    PDF X13769XJ2V0CD00 A10BL 8K/64 256M5 PD45256441 54-pin PC133 PC100 MC-22000 PD23C64020 PD45D128442 4M84 PD45D128842 0443 IC PD23C64000AL 45V16A PD264 A80L

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD45128441,45128841,45128163 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access memories, organized as 8,388,608x4x4, 4,194,304x8x4, 2,097,152x16x4 word x bit x bank , respectively.


    Original
    PDF PD45128441 PD45128441, 608x4x4, 304x8x4, 152x16x4 54-pin

    8668 rc

    Abstract: 16MX8X4 PD45128441G5 32Mx4x4 NEC SINGAPORE 4701 NEC
    Text: SEMICONDUCTORS, SINGAPORE Sept. 2000 TRQ-00-09-343 128M SDRAM RELIABILITY REPORT This report contains reliability data on the following CMOS Synchronous DRAM products fabricated and assembled at the NEC facilities in Singapore. µ PD45128441/841/163G5 Rev. E


    Original
    PDF TRQ-00-09-343 PD45128441/841/163G5 Am241, 8668 rc 16MX8X4 PD45128441G5 32Mx4x4 NEC SINGAPORE 4701 NEC

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original
    PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4532CC727 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC727 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of


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    PDF MC-4532CC727 32M-WORD 72-BIT MC-4532CC727 uPD45128841 M14277EJ1V0DS00

    D45128841G5-A80

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET / - N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM


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    PDF uPD45128441 608x4x4, 304x8x4, 152x16x4 S54G5-80-9JF PD45128441 PD45128xxx. juPD45128xxxG5 54-pin D45128841G5-A80

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T_ MOS INTEGRATED CIRCUIT MC-4532CD647 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CD647 is a 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of


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    PDF MC-4532CD647 32M-WORD 64-BIT MC-4532CD647 uPD45128841 M14276EJ1V0DS00

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT P D 4 5 1 2 8 4 4 1 - A 7 5 ,4 5 1 2 8 8 4 1 -A 7 5 , 4 5 1 2 8 1 6 3 -A 7 5 128M-bit Synchronous DRAM, 133MHz 4-bank, LVTTL Description The ,uPD45128441-A75, 45128841-A75 and 45128163-A75 are high-speed 134,217,728-bit synchronous dynamic


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    PDF 128M-bit 133MHz uPD45128441-A75 45128841-A75 45128163-A75 728-bit 54-pin M14378EJ1V0DS00 uPD45128xxx uPD45128xxxG5

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD4512 8 4 4 1 ,4 5 1 2 8 8 4 1 ,4 5 1 2 8 1 6 3 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ^¡PD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access


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    PDF /JPD4512 128M-bit PD45128441, 728-bit 54-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516CB646 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CB646 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 8 pieces of


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    PDF MC-4516CB646 16M-WORD 64-BIT MC-4516CB646 uPD45128841 M14334EJ1V0DS00

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB64S 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CB64S is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM : ,uPD45128841 are assembled.


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    PDF MC-4516CB64S 64-BIT MC-4516CB64S uPD45128841

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4532CC726 32M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of


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    PDF MC-4532CC726 32M-W 72-BIT MC-4532CC726 uPD45128841

    30A120

    Abstract: D45128 ATEN 1327
    Text: PRELIMINARY DATA SHEET N E C ^ MOS INTEGRATED CIRCUIT _ / /¿ P D 4 5 1 2 8 4 4 1 ,4 5 1 2 8 8 4 1 , 4 5 1 2 8 1 6 3 128 M-bit Synchronous DRAM 4-bank, LVTTL Description The /¿PD45128441, 45128841, 45128163 are high-speed 134,217,728 bit synchronous dynamic random-access


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    PDF uPD45128441 uPD45128841 uPD45128163 608x4x4, 304x8x4, 152x16x4 54-pin 30A120 D45128 ATEN 1327

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T MOS INTEGRATED CIRCUIT MC-4532CC726 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: ,uPD45128841 are assembled.


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    PDF MC-4532CC726 32M-WORD 72-BIT MC-4532CC726 uPD45128841 C-4532CC726EF-A80 C-4532C C726EF-A10

    C4516DA72

    Abstract: MC-4516DA726 MC-4516DA726F-A80 MC-4516DA726LF-A80 PD45128841 CDC2509
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA726 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4516DA726F, 4516DA726LF, 4516DA726LFB are 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: ,uPD4564441 are assembled, and the MC-4516DA726EFC is a


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    PDF MC-4516DA726 72-BIT MC-4516DA726F, MC-4516DA726LF, MC-4516DA726LFB uPD4564441 MC-4516DA726EFC uPD45128841 M168S-50A107 13203EJ6V0D C4516DA72 MC-4516DA726 MC-4516DA726F-A80 MC-4516DA726LF-A80 PD45128841 CDC2509

    4532C

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532CC726 32M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: ,uPD45128841 are assembled.


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    PDF MC-4532CC726 32M-W 72-BIT MC-4532CC726 uPD45128841 MC-4532CC726-A80 MC-4532CC726-A10 4532C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


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    PDF uPD45128441 uPD45128841 uPD45128163 128M-bit 728-bit 54-pin 12650EJ9V0D PD45128441, uPD45128xxx

    C-4532C

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4532CD646 32M-W ORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CD646 is a 33,554,432 words by 64 bits synchronous dynamic RAM module on which 16 pieces of


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    PDF MC-4532CD646 32M-W 64-BIT MC-4532CD646 uPD45128841 C-4532CD646-A80 C-4532CD 646-A10 C-4532C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT //PD45128441,45128841,45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.


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    PDF //PD45128441 128M-bit uPD45128441 728-bit 54-pin 12650EJ80D

    Untitled

    Abstract: No abstract text available
    Text: DATA SH EE T MOS INTEGRATED CIRCUIT MC-4532CD646 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The M C-4532CD646 is a 33,554,432 words by 64 bits synchronous dynam ic RAM module on which 16 pieces of 128M SDRAM: ,uPD45128841 are assembled.


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    PDF MC-4532CD646 32M-WORD 64-BIT C-4532CD646 uPD45128841