P40LE Search Results

TRW J500

Abstract: k45752 52S marking
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4260L, 424260L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The fiPD42S4260L, 424260L are 262 144 words by 16 bits dynamic CMOS RAMs. The fast page mode and

Contextual Info: 40-PIN PLASTIC SOJ 10.16mm(400 B 40 21 C 1 D 20 G J E F U I S H M N M Q T S P K NOTE Each lead centerline is located within 0.12 mm of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS B 26.29 +0.20 −0.35 C 10.16±0.1 D 11.18±0.2

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT «P D 421165 1 M-BIT DYNAMIC RAM 64K-W ORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/W RITE MODE d e sc r ip tio n The JUPD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

424210-60-G

Abstract: d424210
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT « P D 424210 4 M -BIT DYNAMIC RAM 256K-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The f i PD424210 is a 262,144 words by 16 bits CM OS dynam ic RAM with optional EDO. EDO is a kind of page mode and is useful for the read operation.

Contextual Info: 1^ 1 W NEC Electronics Inc. pPD424260A/L, 42S4260A/L 262,144 X 16-Bit Dynamic CMOS RAM Preliminary Information Description The /L/PD424260A/L and /JPD42S4260A/L are fast-page dynamic RAMs organized as 262,144 words by 16 bits and designed to operate from a single power supply:

424260 NEC

Abstract: 424260-80
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e //P D 42S 4260,424260 are 262,144 w o rd s by 16 b its d y n a m ic C M OS R A M s. T h e fa s t page m o d e and b yte

Contextual Info: NEC 3CT 2 e 1992 NEC Electronics Inc. fiPD424190A/L, 42S4190A/L 262,144 X 18-Bit Dynamic CMOS RAM Preliminary Information Description The ¿¿PD424190A/L and /JPD42S4190A/L are fast-page dynam ic RAMs organized as 262,144 words by 18 bits and designed to o perate from a single pow er supply.

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

21x21

Abstract: MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1
Contextual Info: 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］のダイアログ・ボックスが表示されます。 3. 検索したいパッケージのNECコードを入力して， 検索 F をクリックしてください。

357J

Abstract: TOFC
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD421175 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE WRITE MODE Description The µPD421175 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

MD300-10A

Abstract: QFN tray tray datasheet bga SIP 400B TSOP TRAY 40 PIN BGA package tray 64 NEC A39A 240 TSOP package tray 6-tsop TRAY DIMENSIONS 132 PGA
Contextual Info: CHAPTER 4 CHAPTER 4 4.1 PACKING STYLES AND NOTES 4.1.1 Packing Styles 4.1.2 Notes on Handling 4.2 PACKING OF IC PACKAGES 4.2.1 List of Packing 1 DIP (2) SIP, V-DIP, ZIP (3) QUIP, Piggyback (4) PGA (5) SOP, SSOP (6) TSOP (I) (II) (7) QFP, QFP (FP) (8) SVP

h 033

Abstract: R0033
Contextual Info: Mounting Pad Packing Magazine Name MJ400-01A LB-044 40 pin SOJ 400 mil B 40 21 C 1 D 20 G J E F U M I S N M Q T S P K H NOTE 1. Controlling dimention millimeter. 2. Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition.

42S421

Abstract: I2758 uPD424210-60-G eZ 752 SCZ7 NEC Japan 424210-60 7PP4
Contextual Info: PRELIMINARY DATA SH EET_ / M O S IN T E G R A T E D CIRCUIT ¿/PD42S4210-60-G,424210-60-G 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210-60-G,424210-60-G is 262 144 words by 16 bits dynamic CM OS RAMs with optional

MPD424260

Abstract: 424260-70 nec japan
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4260, 424260 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S4260,424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

nec A2C

Contextual Info: DATA SHEET NEC / 421165 MOS INTEGRATED CIRCUIT _ _ ¿ ¿ P D 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description T h e /¿PD421165 is a 6 5,536 w o rd s b y 16 b its C M O S dy n a m ic R A M w ith o p tio nal h y p e r pag e m ode (EDO ).

FR-H1

Contextual Info: JUH i fiPD42275 Video RAM NEC Electronics Inc. May 1992 Description Features The /jPD42275 is a dual-port graphics buffer equipped with a random access port and a serial read port. The serial read port is connected to an internal 2048-bit data register through a 256 x 8 -bit serial read output

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT i P D 4 2 1 1 7 5 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE (EDO , BYTE WRITE MODE Description The ¿¡PD421175 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/W RITE MODE Description The //PD42S4260,424260 are 262,144 words by 16 bits dynamic CMOS RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.

424260-60

Abstract: 4275a5
Contextual Info: DATA SHEET \ I F f~ / MOS INTEGRATED CIRCUIT / uPD42S4260-60, 424260-60 4M -B IT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S4260-60, 424260-60 are 262,144 words by 16 bits CMOS dynamic RAMs. The fast page mode

Contextual Info: * *C -.s, IPD42S4260 |aPD42S4260L 262.144x16 Bit Dynamic CMOS DRAM NEC NEC Electronics Inc. ! Preliminary Information October 1991 Description Pin Configuration The jiPD42S4260/L is a fast page dynamic RAM organized as a 262,244 words by 16 bits and designed

M1061

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD421165 1 M-BIT DYNAMIC RAM 64K-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The µPD421165 is a 65,536 words by 16 bits CMOS dynamic RAM with optional hyper page mode (EDO). Hyper page mode (EDO) is a kind of the page mode and is useful for the read operation.

424210

Abstract: PD424210 424210-70 PD424 uPD424210
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD424210 4 M-BIT DYNAMIC RAM 256K-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The µPD424210 is a 262,144 words by 16 bits CMOS dynamic RAM with optional EDO. EDO is a kind of page mode and is useful for the read operation.

P40LE

Contextual Info: 40 PIN PLASTIC SOJ 400 mil B 40 21 C 1 D 20 G J E F U I S H M N M T S P K NOTE 1. Controlling dimention Q millimeter. 2. Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. ITEM MILLIMETERS