OT323 Search Results

Contextual Info: S T C 2201 S amHop Microelectronics C orp. Mar 15 2005 ver1.2 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

DFDH2012T900S

Abstract: LPC 815 LG F11YT1 HAT2180RP G402R P06KE GP03S ara cd 100 39p LPC TPM 0603FT
Contextual Info: 1-fid e n tic i Iw in iie a u Model : F11YT1 R:0 Intel Yonah ULV+Calistoga 945GM+ICH7-M Revision History ORIGINAL RELEASE A B 2006/01/12 Rev:B release. c 2006/03/17 R e v :C release. 2006/03/31 R e v :0 release. PCB STA C K U P LAY1 LAY2 LAY3 LAY4 LAY5

PCA1318P

Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
Contextual Info: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product

Contextual Info: S T C 2201 S amHop Microelectronics C orp. J an 03 2005 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 135 @ V G S = -4.5V

Contextual Info: S T C 2201 S amHop Microelectronics C orp. Mar 15 2005 ver1.2 P -C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m Ω ) Max ID R ugged and reliable.

br 123 s

Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Contextual Info: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital

Contextual Info: S T C 2200 S amHop Microelectronics C orp. J an 03 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 85 @ V G S = 4.5V

TC2200

Contextual Info: S T C 2200 S amHop Microelectronics C orp. Mar 15 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

ot323

Contextual Info: Green Product S T C 2200 S amHop Microelectronics C orp. Mar 15 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.