OPA8512CND Search Results
OPA8512CND Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: OPA8512CND Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512CND --------------------110um | |
OPA8512CNDContextual Info: OPA8512CND Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512CND --------------------110um OPA8512CND |