OIP32 Search Results

Contextual Info: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

GN02018B

Contextual Info: Panasonic GaAs MMICs GN02018B GaAs IC with built-in ferroelectric Unit : mm For mixer with built-in local amplifier of cellular phone Other communication equipment IE • Features • High conversion-gain, low noise, low distortion (IP3) • Single, positive power supply

20-PIN

Abstract: HS350 PG2181T5R
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT PG2181T5R HIGH POWER DP4T SWITCH FOR WiMAX DESCRIPTION The μPG2181T5R is a GaAs MMIC high power DP4T switch which was developed for WiMAX. This device can operatefrom 2.3 to 3.8 GHz, with low insertion loss and high isolation.

PC3225

Abstract: transistor marking 6U ghz PC2710TB C3J marking max3139 PC2708TB PC2709TB marking c1d PC3223TB marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

SPF-3043

Contextual Info: Preliminary Preliminary Product Description Sirenza Microdevices’ SPF-3043 is a high performance 0.25µm pHEMT Gallium Arsenide FET. This 300µm device is ideally biased at 3V,20mA for lowest noise performance and battery powered requirements. At 5V,40mA the device will

PC8187TB

Abstract: Monolithic Function Generator
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8187TB SILICON MMIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER DESCRIPTION The μPC8187TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver. This IC is higher operating frequency, lower distortion and higher conversion gain than conventional

Transistor C3E

Abstract: C2H marking
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

marking C3Z

Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

PC3239TB-E3

Abstract: PC3239TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3239TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3239TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

PC8109

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8187TB SILICON MMIC HI-IP3 FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER DESCRIPTION The μPC8187TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless transceiver. This IC is higher operating frequency, lower distortion and higher conversion gain than conventional

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: SGA9189Z SGA9189Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9189Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =39dBm, and P1dB =25.5dBm. This RF

SGA9289Z

Abstract: MARKING P2Z SGA-9289z SGA9289ZSR rf transistor MARKING CODE 016 marking code of sot89 transistor J4-87 transistor J9
Contextual Info: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD’s SGA9289Z is a high performance transistor designed for operation to 3GHz. With optimal matching at 2GHz, OIP3 =42.5dBm, and P1dB =27.5dBm. This

Contextual Info: LT6402-12 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 12dB DESCRIPTION FEATURES n n n n n n n n n 300 MHz –3dB Bandwidth Fixed Gain of 12dB Low Distortion: 43dBm OIP3, –82dBc HD3 (20MHz, 2VP-P) Low Noise: 15dB NF, en = 2.6nV/√Hz (20MHz)

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3232TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

LL2012-FR47

Abstract: IIP32 analysis PCS1900 UPC8106TB UPC8109TB UPC8172TB
Contextual Info: SILICON RFIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER FEATURES UPC8172TB BLOCK DIAGRAM • RECOMMENDED OPERATING FREQUENCY: fRFout = 0.8 to 2.5 GHz • SUPPLY VOLTAGE: VCC = 2.7 to 3.3 V • HIGHER IP3 AND CONVERSION GAIN: CG = 9.5 dB TYP OIP3 = +7.5 dBm TYP @ fRFout = 0.9 GHz

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PC3237TK

Abstract: 2T 970
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社