NTE58 Search Results

NTE5800

Abstract: NTE5804 DO27 NTE5801 NTE5802 NTE5803 NTE5805 NTE5806 NTE5808 NTE5809
Contextual Info: NTE5800 thru NTE5809 Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp, DO27 Description: The NTE5800 through NTE5809 silicon rectifiers are designed for use in power supplies and other applications having need of a device with the following features:

LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

Abstract: NTE585
Contextual Info: NTE585 Silicon Rectifier Diode Schottky Barrier, Fast Switching Features: D Low Switching Noise D Low Forward Voltage Drop D High Current Capability D High Reliability D High Surge Capability Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single

NTE5869

Abstract: NTE5850 transistor c 5855
Contextual Info: NTE5850 thru NTE5869 Silicon Power Rectifier Diode, 6 Amp, DO4 Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

NTE5911

Abstract: "Power rectifier Diode" 435a2s 10 AMP 1000V RECTIFIER DIODE NTE5892 NTE5899 NTE5900
Contextual Info: NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp, DO4 Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

Contextual Info: NTE5828 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current50 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.600 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)50 @Temp. (øC) (Test Condition)150#

Contextual Info: NTE5861 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)150#

diode 400V 6A

Abstract: NTE589
Contextual Info: NTE589 Silicon Rectifier General Purpose, Fast Recovery Features: D High Surge Current Capability D High Current Operation D Fast Switching for High Efficiency Maximum Ratings and Electrical Characteristics: TA = +25°C, Note 1 unless otherwise specified

NTE5885

Abstract: NTE5888 NTE5864 NTE5865 NTE5884 NTE5889
Contextual Info: NTE5864 thru NTE5889 Silicon Power Rectifier Diode, 25 Amp Description: The NTE5864 through NTE5889 are silicon power rectifier diodes in a DO4 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for

NTE586

Contextual Info: NTE586 Silicon Rectifier Diode Schottky Barrier, Fast Switching Features: D Low Switching Noise D Low Forward Voltage Drop D High Current Capability D High Reliability D High Surge Capability Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single

NTE584

Abstract: DO35
Contextual Info: NTE584 Silicon Schottky Diode Description: The NTE584 is a metal to silicon junction diode in a DO35 type package featuring high breakdown, low turn–on voltage and ultrafast switching primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range.

NTE5806

Abstract: NTE5802 NTE5800 NTE5801 NTE5803 NTE5804 NTE5805 NTE5809 NTE5808
Contextual Info: NTE5800 thru NTE5809 Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp Description: The NTE5800 through NTE5809 silicon rectifiers are designed for use in power supplies and other applications having need of a device with the following features: D High Current to Small Size

Contextual Info: NTE5838 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)150#

Contextual Info: NTE5841 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)150#

Contextual Info: NTE5887 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current12.0 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.250 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)12 @Temp. (øC) (Test Condition)150#

Contextual Info: NTE5830 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)150#

NTE5810

Abstract: NTE5811 NTE5870 NTE5891 NTE587
Contextual Info: NTE5810 & NTE5811, NTE5870 thru NTE5891 Silicon Power Rectifier Diode, 12 Amp Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

NTE5819

Abstract: NTE5818 NTE5820 NTE5821 NTE5822 NTE5823 NTE5824 NTE5825
Contextual Info: NTE5818 thru NTE5825 Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp Description: The NTE5818 through NTE5825 are silicon fast recovery rectifiers in a DO4 type package having a typical recovery time of 150ns providing high efficiency at frequencies to 250kHz. Typical applications

NTE5837

Abstract: nte5848 NTE5834 NTE584 NTE5847 NTE5838 NTE5849 NTE5830 NTE5831 NTE5832
Contextual Info: NTE5830 thru NTE5849 Stud Mount Standard Recovery Silicon Rectifiers, 3 Amp, DO4 Description: The NTE5830 through NTE5849 are silicon rectifiers in a DO4 type package designed for use in power supplies and other applications having need of a device with the following features:

NF-2A

Abstract: AD-04 NTE6008
Contextual Info: FAST RECOVERY POWER RECTIFIERS STUD MOUNTED 200Nanosecond Reverse Recovery Time Peak Reverse Voltage PRV Average Rectified Forward Current, lo 12 Amp« 40 Amp* Cathode/Case Anode/Cate Cathode/Case Anode/Caw 200 NTE5818 NTE5819 NTE6006 NTE6007 400 NTE5820

493a2s

Abstract: NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NTE5912 NTE5933 NF-2A
Contextual Info: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

nte5823

Abstract: NTE5819 NTE5820 sonar amp sonar ranging NTE5818 NTE5821 NTE5822 NTE5824 NTE5825
Contextual Info: NTE5818 thru NTE5825 Silicon Power Rectifier Fast Recovery, 12 Amp, DO4 Description: The NTE5818 through NTE5825 are silicon fast recovery rectifiers in a DO4 type package having a typical recovery time of 150ns providing high efficiency at frequencies to 250kHz. Typical applications

10 AMP 1200V RECTIFIER DIODE

Abstract: NTE5888 silicon power rectifier diodes NTE5884 NTE5885 silicon power rectifier NTE5864 NTE5865 NTE5889
Contextual Info: NTE5864 thru NTE5889 Silicon Power Rectifier Diode, 25 Amp, DO4 Description: The NTE5864 through NTE5889 are silicon power rectifier diodes in a DO4 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for

LOW FORWARD VOLTAGE DROP DIODE RECTIFIER

Abstract: NTE586
Contextual Info: NTE586 Silicon Rectifier Diode Schottky Barrier, Fast Switching Features: D Low Switching Noise D Low Forward Voltage Drop D High Current Capability D High Reliability D High Surge Capability Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified. Single

Contextual Info: NTE5853 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current6.0 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)150#