NTE41 Search Results

P-Channel Junction sot416

Abstract: NTA4151P NTA4151PT1G single diode SC75
Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

NTA4153N

Abstract: NTA4153NT1 NTA4153NT1G NTE4153N NTE4153NT1G
Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available

Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available

NTA4151PT1G

Abstract: NTE4151PT1G NTA4151P NTA4151PT1 NTE4151P
Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

Contextual Info: NTA4151P, NTE4151P Product Preview Small Signal MOSFET 20 V, 350 mA, Single P−Channel, Gate Zener, SC−75 & SC−89 http://onsemi.com Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm)

NTA4153NT1G

Abstract: NTA4153N NTA4153NT1 NTE4153N NTE4153NT1G
Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available

NTA4151P

Abstract: NTA4151PT1G NTA4151PT1 NTE4151P NTE4151PT1G
Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

dd 127 dd 127 d

Abstract: MOSFEt n channel for 800 volt 2 amp DD 127 D transistor gs 069 onsemi 035 zener diode NTA4151P NTA4151PT1G esd protect mosfet K 250 diode MARKING QG 6 PIN
Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

NTA4153NT1G

Abstract: NTA4153N NTA4153NT1 NTE4153N NTE4153NT1G
Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available

NTA4151PT1G

Abstract: NTE4151PT1G NTA4151P NTA4151PT1 NTE4151P NTE4151PT1
Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

NTE40

Abstract: NTE41
Contextual Info: NTE40 NPN & NTE41 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available

Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

NVA4153NT1G

Contextual Info: NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 http://onsemi.com Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate

03ATA

Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • http://onsemi.com Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

NTE40

Abstract: NTE41
Contextual Info: NTE40 NPN & NTE41 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

TO18 package

Abstract: Aluminum alloy 8053 to18 case ALLOY 52 to18 NTE412 thermal resistance case heat sink
Contextual Info: NTE412 Hardware Heat Sink for TO18 Type Package Description: The NTE412 is a very low cost 1-peice heat sink for plastic “D”, plastic TO18, and metal can TO18 type transistors. Unit presses onto case requiring no special assembly tool and can be installed after as-

NTA4153NT1G

Abstract: NTE4153NT1G NTA4153N NTA4153NT1 NTE4153N sot416
Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available

NTA4153NT1G

Contextual Info: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available

NTA4151

Abstract: marking TN NTA4151P, NTE4151P
Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

Contextual Info: NTA4151P, NTE4151P Small Signal MOSFET −20 V, −760 mA, Single P−Channel, Gate Zener, SC−75, SC−89 Features • • • • • Low RDS on for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package

Contextual Info: NTE41 Transistors PNP Multichip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)100 V(BR)CBO (V) I(C) Max. (A)50m P(D) Max. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

laser transmitter circuit diagram

Abstract: circuit diagram of 2.4ghz rf transmitter and receiver PC usb mouse CIRCUIT diagram wireless usb mouse circuit diagram h102 eeprom mps430 rf transmitter circuit diagram equivalent integrated circuit H102 H102 D 1 laser mouse
Contextual Info: ADNK-7053-ND24 USB 2.4GHz RF Wireless Laser Mouse Designer’s Kit Product Overview Description Features Avago Technologies is producing a new wireless laser mouse reference design kit. Based on the new Avago Technologies ADNS-7050 low power laser mouse sensor, Texas Instruments