NSG20648A Search Results

Contextual Info: Insulated Gate Bipolar Transistors Page 1 of 1 Home Package Device Type BVCES Volts IC CONT Amp VCE(sat) Volts tf* ns (typical) CIES q JC pF (typical) ° C/W (typical) TO-254 NSG20640 600@90° C 31 2.0 800 1500 1.25 TO-254 NSG20648A 600@90° C 24 2.9 100

NSG20640

Abstract: NSG20648A NSG21034 NSG30620 NSG30620A NSG40635 NSG40640 NSG40648A NSG40660A NSG40675
Contextual Info: NEW ENGLAND SEMICONDUCTOR INSULATED GATE BIPOLAR TRANSISTOR PACKAGE TO-257 TO-254 TO-258 DEVICE TYPE b v ces l e CONT AMPS VcE(snt) VOLTS lf (1) nsec * Q es * Pf 0j/c* °c/w NSG30620 600 20 2.6 570 750 2.0 NSG30620A 600 20 3.1 310 750 2.0 NSG20640 600@ 90°c

NSG20640

Abstract: NSG20648A NSG21034 NSG30620 NSG30620A NSG40635 NSG40640 NSG40648A NSG40660A NSG40675
Contextual Info: NEW ENGLAND SEMICONDUCTOR INSULATED GATE BIPOLAR TRANSISTOR PACKAGE TO-257 TO-254 TO-258 DEVICE TYPE b v ces l e CONT AMPS VcE(snt) VOLTS lf (1) nsec * Qes * Pf 0j/c* °c/w NSG30620 600 20 2.6 570 750 2.0 NSG30620A 600 20 3.1 310 750 2.0 NSG20640 600@ 90°c

transistor bc 570

Contextual Info: NEW ENGLAND SEMICONDUCTOR INSULATED GATE BIPOLAR TRANSISTOR PACKAGE TO-257 TO-254 TO-258 i DEVICE TYPE B^C ES le CONT AMPS VOLTS ^C E (sat) ‘f (1) nsec * C|ES * 0 j/c * NSG30620 600 20 2.6 570 750 2.0 NSG30620A 600 20 3.1 310 750 2.0 NSG20640 600@ 90°c