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    NRVBS3200T3G Search Results

    NRVBS3200T3G Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NRVBS3200T3G
    		On Semiconductor NRVBS3200 - DIODE RECTIFIER DIODE, Rectifier Diode Original PDF 96.61KB 4
    NRVBS3200T3G-VF01
    		onsemi DIODE SCHOTTKY 200V 3A SMB Original PDF 253.44KB
    NRVBS3200T3G-VF01
    		onsemi DIODE SCHOTTKY 200V 3A SMB Original PDF 96.61KB
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    NRVBS3200T3G Price and Stock

    onsemi

    onsemi NRVBS3200T3G

    DIODE SCHOTTKY 200V 3A SMB
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    DigiKey NRVBS3200T3G Tape & Reel
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    Verical () NRVBS3200T3G 4,725 568
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    NRVBS3200T3G 2,100 568
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    Newark () NRVBS3200T3G Cut Tape 1
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    NRVBS3200T3G Tape & Reel 2,500
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    RS NRVBS3200T3G Bulk 40
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    Rochester Electronics NRVBS3200T3G 6,825 1
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    ComSIT USA NRVBS3200T3G 33
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    Chip Stock NRVBS3200T3G 11,500
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    Vyrian NRVBS3200T3G 4,596
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    Win Source Electronics NRVBS3200T3G 10,000
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    onsemi NRVBS3200T3G-VF01

    DIODE SCHOTTKY 200V 3A SMB
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    DigiKey NRVBS3200T3G-VF01 Tape & Reel
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    Verical NRVBS3200T3G-VF01 1,477 701
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    Quest Components NRVBS3200T3G-VF01 54
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    Rochester Electronics NRVBS3200T3G-VF01 1,477 1
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    onsemi NRVBS3200T3G-IR02

    (Alt: NRVBS3200T3G-IR02)
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    Avnet Asia NRVBS3200T3G-IR02 37,500 99 Weeks 7,500
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    onsemi NRVBS3200T3G-IR01

    (Alt: NRVBS3200T3G-IR01)
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    Avnet Asia NRVBS3200T3G-IR01 99 Weeks 7,500
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    NRVBS3200T3G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS3200T3G, NRVBS3200T3G MBRS3200T3/D PDF

    NRVBS3200T3

    Abstract: NRVBS3200T3G power rectifier MBRS3200T3 Rev.5 MBRS3200T3D
    Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS3200T3G, NRVBS3200T3G MBRS3200T3/D NRVBS3200T3 power rectifier MBRS3200T3 Rev.5 MBRS3200T3D PDF

    403A03

    Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS3200T3G, NRVBS3200T3G MBRS3200T3/D 403A03 PDF

    Contextual Info: MBRS3200T3G, NRVBS3200T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS3200T3G, NRVBS3200T3G MBRS3200T3/D PDF