MTP2P45
Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5
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o-218o-22qabmtm2p50204aa+13mtp2p50220abmtm2p45mtp2p45mtp4n90mtp6n6mtp8n45irf840 selection guidemtp3n80mth8p20mtp3n6mtp1n95mtp2n85
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MTP4N20
Abstract: MTP8N18 MTP5N40 mtp8n20 mtp4n35 IRF612 MTH8P20 power mosfets to 204aa T0-204AE MTM2P50
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 MTM2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5 MTM5P20
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o-218o-22qabmtm2p50204aa+13mtp2p50220abmtm2p45mtp2p45mtp4n20mtp8n18mtp5n40mtp8n20mtp4n35irf612mth8p20power mosfets to 204aat0-204ae
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TP2P45
Abstract: TP2P50 MTP2P45 2P45
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM2P45 MTM2P50 MTP2P45 MTP2P50 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Ch annel Enh an cem en t-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r m e d iu m v o lta g e ,
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mtm2p45mtm2p50mtp2p45mtp2p50+4t0-204aatp2p45tp2p502p45
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MTM2P50
Abstract: MTP2P45 mtm2p45
Contextual Info: MOTOROLA SC X S T R S /R IME D I F b3b7254 G Q flW B | MOTOROLA •H SEMICONDUCTOR I TECHNICAL DATA MTM2P45 MTM2P50 MTP2P45 MTP2P50 Designer's Data Sheet Pow er Field Effect Transistor P-Channe! Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed for medium voltage,
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b3b7254mtm2p50mtp2p45mtm2p45 |
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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dk101/do-22qi0020-hmfe9200+9buz84abuz90 equivalentirf150 mosfet amp circuitbuz35smtp40n06mirfz22 mosfet1rf620mtm12n10lmtp25n10e
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IRF250a
Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15
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o-204aairf240mtm15n20irf252+12irf250mtm40n20mtm5n18mtm5p18mtm7n18mtm8p18irf250amth8p20mtm20n10mtm45n15mtp2p45mtm12n18
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MTM20N08
Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08
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o-204aairf150mtm55n10mtm8n08+10mtm8p08mtm10n08mtm12p08mtm12n08mtm20n08mtm25n08mtp2p45mtm35n05irf123mtm55n08
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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dk101/d0020-frj1rfz401rf150+8mtp25n10emth7n50 transistormtp35n06ebuz80a equivalentbuz90 equivalentmtp40n06mmfe9200mth7n50
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MTP3055A
Abstract: MTM12N06 mtp25n06 MTM20N08 irf150 MTH8P20 MTM35N05 MTP2P45 MTM10N05 BUZ11
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 rDS(on) Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08
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o-204aairf150mtm55n10mtm8n08+14mtm8p08mtm10n08mtm12p08mtm12n08mtm20n08mtm25n08mtp3055amtm12n06mtp25n06mth8p20mtm35n05mtp2p45mtm10n05buz11
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68b09sn74als04bnsn74als08nsn74als00an+16ca3046ua733lm311plm318ca309478h05cp4071data sheet ic 74082n4891ic 7408mda970a2mda25001854-0071mda25022n4342ic ttl 7400
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MTM3N35
Abstract: MTM3N55 MTM5N40 MTM1N95 MTM2N45 MTM2N50 MTM2N85 MTM2N90 MTM2P45 MTM2P50
Contextual Info: - 282 - m % f Ml Y Vd s or € i Vd g % V * $ Vos fê %î (Ta=25T¡) Pd Id I gss Vg s I d ss th) % & ÔU FDs(on) Vd s = '14 (Ta=25'C) I d (on) Ciss Coss Crss (*typ) (*typ) (*typ) Id (max) (max) (max) Vd s (A) (pF) (pF) (pF) (V) g fs (V) * /CH (A) (W) (nA)
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mtm1n95o-204aamtm2n45mtm2n50+7mtm2n85mtm5n40mtm3n35mtm3n55mtm2n90mtm2p45mtm2p50
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0hf400hf600hf806fp10+126f10070hf10uaa2001mc8500micromodule m68mm191n938874als6432n6058mc1450262n5160 motorolamc3340 equivalentpn3402
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