MSM32 Search Results

ic 74151

Abstract: 82C54 oki oki 82c54 oki cross MSM92RB01 msm 32X32 oki msm32
Contextual Info: O K I Semiconductor MSM30R0000/MSM32R0000/MSM92R000 Second-Generation 0.5|xm Sea of Gates and Customer Structured Arrays D E SC R IP TIO N Oki's second-generation 0.5|am ASIC products are available in b oth Sea Of Gates SOG and Custom er Structured Array (CSA) architectures. The M SM 30R Series, M SM 32R Series, and M SM 92R Series all offer

oki cross

Abstract: MSM98Q MSM99Q BGA and QFP Package 14x14
Contextual Info: Oki Semiconductor MSM32Q/33Q/98Q/99Q 0.35 |im Sea of Gates and Customer Structured Arrays DESCRIPTION O ki's 0.35 |im Application-Specific Integrated Circuit ASIC products are available in both Sea Of Gates (SOG) and Custom er Structured A rray (CSA) architectures. Both the SOG-based M SM 33Q0000 series and

Contextual Info: MEGGITT SIGMA AXIAL INDUCTORS SMD INDUCTORS THIN FILM PRINTED INDUCTORS POWER CHOKES IN RADIAL AND AXIAL STYLE SMD Chip Inductor TYPE MSM32 SERIES The MSM32 series is a standard 12:10 moulded winding on ferrite, of particularly high quality and reliability.

SUN HOLD 0910

Contextual Info: Oki Semiconductor MSM32Q/33Q/98Q/99Q 0.35 |im Sea of Gates and Customer Structured Arrays DESCRIPTION Oki's 0.35 Jim Application-Specific Integrated Circuit ASIC products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MSM33Q0000 series and

Contextual Info: J2N0021-38-81 ¡ 電子デバイス 作成：1998年 8月 MSM32R0000 l 前回作成：1996年10月 MSM32R0000ファミリ 高集積0.5mm CMOS ゲートアレイ n 概要 MSM32R0000ファミリは高集積0.5mmCMOSプロセスを用いた2層メタル構造の超高速／低消費電

30r0080

Abstract: PQFP 32X32 MSM ARRAY
Contextual Info: O K I Semiconductor MSM30R0000/MSM32R0000/MSM92R000 Second-Generation 0.5|im Sea of Gates and Customer Structured Arrays DESCRIPTION Oki's second-generation 0.5|im ASIC products are available in b oth Sea Of Gates SOG and Custom er Structured Array (CSA) architectures. The M SM 30R Series, M SM 32R Series, and M SM 92R Series all offer

Contextual Info: Description The MSM32512HBD is a plastic 512Kx32 SRAM multichip module housed in a 119 ball Ball Grid Array Package . Access times of 12, 15 or 17ns are available. The 3.3V device is available to commercial industrial or military temperature grade and is designed to operate in high reliability applications.

ic 74151

Abstract: ic 74163 oki cross MSM92RB01 MSM92RB02 msm32r0120 oki 82c54 82C54 oki of ic 74151 30R06
Contextual Info: MSM30R0000/MSM32R0000/MSM92R000 Second-Generation 0.5µm Sea of Gates and Customer Structured Arrays DESCRIPTION Oki's second-generation 0.5µ m ASIC products are available in both Sea Of Gates SOG and Customer Structured Array (CSA) architectures. The MSM30R Series, MSM32R Series, and MSM92R Series all offer

82C54 oki

Abstract: ic 74151 oki 82c54 OKI SEMICONDUCTOR RB35 ic 74151 specification oki cross MSM92RB01 MSM92RB02
Contextual Info: DATA SHEET O K I A S I C P R O D U C T S MSM30R/32R/92R 0.5µm Sea Of Gates and Customer Structured Arrays August 2002 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

Contextual Info: W3H32M72E-XSB2X W3H32M72E-XSB2XF 256MB – 32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package FEATURES BENEFITS  Data rate = 667, 533, 400  69% space savings vs. FPBGA  Package:  Reduced part count • 208 Plastic Ball Grid Array PBGA , 16 x 20mm

W3J512M32G

Abstract: M41K256M32
Contextual Info: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:

Contextual Info: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: W3H264M16E-XBX ADVANCED* 256MB – 2 x 64M x 16 DDR2 SDRAM 79 PBGA FEATURES BENEFITS  Data rate = 400 Mb/s, 533 Mb/s, 667 Mb/s*  Larger ball pitch for higher reliability  Package:  Footprint compatible with W3H64M16E • 79 Plastic Ball Grid Array PBGA , 11 x 14mm

DNU-A13

Contextual Info: W3H64M16E-XBX 128MB – 64M x 16 DDR2 SDRAM 79 PBGA FEATURES BENEFITS  Data rate = 400 Mb/s, 533 Mb/s  Larger ball pitch for higher reliability  Package:  Pinout compatible with 2-Rank Version • 79 Plastic Ball Grid Array PBGA , 11 x 14mm

Contextual Info: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included

w3j128m72

Abstract: w3j512m72
Contextual Info: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: W3J128M72K-XLBX W3J128M72K-XPBX *ADVANCED 1GB – 128M x 72 DDR3 SDRAM – 1.35V – 375 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800; 1,066; 1,333; 1,600* Mb/s  35%* Space savings vs. FBGA  Packages:  Reduced part count

Contextual Info: S W I T CHING T HE S M A R T WAY Reed Switches SMD Reed Switches Reed Sensors Level Sensors Magnets Sensor Technology Welcome to PIC Our work is never done. Passion, respect, integrity and discipline are the four core values which drive us to sophisticated

Contextual Info: MS-328-6 S W I T C HI N G T HE S M A R T WAY MS-328-6 Power Reed Sensor Flatpack Electrical Characteristics @ 25 °C Contact form Features A W / VA 50 VDC 200 VAC 250 Switching current max. A 1.5 Carry current max. A 2 Breakdown voltage min. VDC 400 Total resistance max. initial

Contextual Info: MS-324R-4 S W I T C HI N G T HE S M A R T WAY MS-324R-4 Reedsensor mit Wechslerkontakt im Flachgehäuse Elektrische Daten @ 25 °C Kontaktform Features C W / VA 5 VDC 175 VAC 120 Schaltstrom max. A 0,25 Dauerstrom max. A 1,5 Spannungsfestigkeit min. VDC 200

Contextual Info: MS-324-5 S W I T C HI N G T HE S M A R T WAY MS-324-5 Netzspannungs-Reedsensor im Flachgehäuse Elektrische Daten @ 25 °C Kontaktform Features A Schaltleistung max. Schaltspannung max. W / VA 10 VDC 200 VAC 260 Schaltstrom max. A 0,3 Dauerstrom max. A 1,4

Contextual Info: MS-324R-3 S W I T C HI N G T HE S M A R T WAY MS-324R-3 Mikro-Miniatur-Reedsensor im Flachgehäuse Elektrische Daten @ 25 °C Kontaktform Features A Schaltleistung max. Schaltspannung max. W / VA 10 VDC 200 VAC 140 Schaltstrom max. A 1 Dauerstrom max. A 1,2

Contextual Info: MS-328-3 S W I T C HI N G T HE S M A R T WAY MS-328-3 Standard-Reedsensor im Flachgehäuse Elektrische Daten @ 25 °C Kontaktform Features A Schaltleistung max. Schaltspannung max. W / VA 10 VDC 200 VAC 140 Schaltstrom max. A 1 Dauerstrom max. A 1,2 Spannungsfestigkeit min.