Dual NPN high voltage transistor in SOT-363 package, with 180 V collector-base voltage, 160 V collector-emitter voltage, 200 mA collector current, and 100 MHz transition frequency, suitable for medium power amplification and switching applications.
Dual NPN transistor in SOT-26 package, with 160 V collector-emitter voltage, 0.2 A continuous collector current, 100 MHz transition frequency, and 0.2 W power dissipation, suitable for medium power amplification and switching applications.