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    MMBT5551-G) Search Results

    MMBT5551-G) Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MMBT5551-G1
    		Zowie Technology High Voltage Transistor NPN silicon Original PDF 86.48KB 4
    badge MMBT5551-G(RANGE:100-200)
    		JCET Group MMBT5551 NPN transistor in SOT-23 package, rated for 160V collector-emitter voltage, 600mA collector current, with 300mW power dissipation and DC current gain ranging from 100 to 300 at 5V VCE. Original PDF
    badge MMBT5551-G(RANGE:200-300)
    		JCET Group MMBT5551 NPN transistor in SOT-23 package, rated for 160V collector-emitter voltage, 600mA collector current, with 300mW power dissipation and DC current gain ranging from 100 to 300 at 5V VCE. Original PDF
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    MMBT5551-G) Price and Stock

    Comchip Technology Corporation Ltd

    Comchip Technology Corporation Ltd MMBT5551-G

    RF Bipolar Transistors VCEO=160V IC=600mA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MMBT5551-G 2,917
    • 1 $0.39
    • 10 $0.27
    • 100 $0.17
    • 1000 $0.08
    • 10000 $0.05
    		Buy Now