MJE170 Search Results

to225a

Abstract: to225aa TO-225AA to225
Contextual Info: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage −

Contextual Info: MJE170/171/172 PNP EPITAXIAL SILICON TRANSISTOR LOW POWER AUDIO AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit -60 V : MJE171 -80 V : MJE172 -100 V C ollector-B ase V o lta g e : MJE170

mje172 analog

Contextual Info: MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

fast switching pnp transistor 3A 60V

Abstract: MJE170 MJE171 MJE172
Contextual Info: MJE170/171/172 PNP EPITAXIAL SILICON TRANSISTOR LOW POWER AUDIO AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage : MJE170 : MJE171 : MJE172 Collector-Emitter Voltage : MJE170 : MJE171

Contextual Info: SAMS UN G SEM ICO ND UC TO R INC MJE170 14E 0 | 7 ^ 4 1 4 2 OOOÎbâT E | PN P EPITAXIAL SILIC O N TRAN SISTO R T " 3 3 - / 7 LO W P O W E R A U D IO A M P L IF IE R LO W CURRENT, HIGH S P E E D SW IT C H IN G A P P LIC A T IO N S A B S O L U T E M A X IM U M R A T IN G S Ta= 2 5 ° C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors MJE170 TRANSISTOR PNP TO – 126 FEATURES z Low Power Audio Amplifier z Low Current, High Speed Switching Applications 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

JE172

Abstract: JE182 JE170 je171 JE180 MJE170 motorola MJE180 MOTOROLA JE181 mj317 MJ31-7
Contextual Info: M O T O R C L A SC l^ E D I XSTRS/R F t3b?aS4 0005307 7 | r -3 3 -t f Ÿ PNP r» -3 3 -¡7 MOTOROLA MJE170 thru MJE172 SEMICONDUCTOR NPN TECHNICAL DATA MJE180 thru MJE182 COM PLEMENTARY PLASTIC SILICO N POWER TRANSISTORS 3 AMPERE POWER TRANSISTORS COM PLEMENTARY SILICO N

Contextual Info: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http://onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.

MJE170

Abstract: MJE171 MJE172 MJE180 MJE181 MJE182
Contextual Info: MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171, 172 MJE180, 181, 182 PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS 'Low Power Audio Amplifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. CO LLECTO R

Contextual Info: MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 PNP Epitaxial Silicon Transistor 1 . Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 TO-126 SOT-32 Plastic Package MJE170, 171, 172 MJE180, 181, 182 PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS

je180

Abstract: JE18
Contextual Info: MJE17Q, MJE171, MJE172 MJE180, MJE181, MJE182 MJE170, 171,172 M JE180,181,182 PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low Pow er Audio Am plifier and Low Current, High Speed Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR

MJE170

Abstract: MJE171 MJE172 MJE180 MJE181 MJE182
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 TO-126 SOT-32 Plastic Package MJE170, 171, 172 MJE180, 181, 182 PNP PLASTIC POWER TRANSISTORS NPN PLASTIC POWER TRANSISTORS Low Power Audio Amplifier and Low Current, High Speed Switching Applications

MJE181

Abstract: MJE182 MJE172 MJE180 MJE170 MJE171 mje17c HF9 transistor
Contextual Info: ÆàMOS PEC COMPLEMENTARY SILICON PLASTIC PNP MJE170 MJE171 MJE172 POWER TRANSISTORS . designed for low power amplifier and low current, high speed switch» i applications. FEATURES: * Collector-Emitter Sustaining Voltage40 v Min - MJE170.MJE180 = 60 V (Min) - MJE171,MJE181

MJE520 datasheet

Abstract: MJE240 MJE520 equivalent MJE720 MJE222 Power Transistors TO-126 Case MJE181 MJE182 MJE200 MJE220
Contextual Info: Power Transistors TO-126 Case Continued Top View TYPE NO. IC (A) PD (W) BVCBO (V) BVCEO (V) hFE MIN MIN MIN MAX Bottom View @ IC (mA) VCE(SAT) (V) @ IC (A) MAX fT (MHz) NPN PNP MAX MIN MJE180 MJE170 3.0 15 60 40 50 250 100 0.3 0.5 50 MJE181 MJE171 3.0 15

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer MJE170, MJE171, MJE172 MJE180, MJE181, MJE182 TO-126 SOT-32 Plastic Package MJE170, 171, 172 MJE180, 181, 182

VCS-60V

Abstract: MJE170 MJE171
Contextual Info: SAMSUNG SEM ICONDUCTOR 1ME INC MJE170 I 7^4142 □□□?bäc E I PNP EPITAXIAL SILICON TRANSISTOR T" 3 3 - / 7 LOW POWER AUDIO AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Ta= 25°C ) Characteristic Symbol Collector-Base Voltage

MJE170

Abstract: MJE171 MJE172
Contextual Info: MJE170/171 /172 PNP EPITAXIAL SILICON TRANSISTOR LOW POWER AUDIO AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector-Base Voltage : MJE170 V c bO Rating Unit -60 V : MJE171 -80 V : MJE172 -100

MJE170

Abstract: MJE171 MJE172
Contextual Info: MJE170/171/172 MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

MJE241

Abstract: Power Transistors TO-126 Case MJe340 350 MJE222 mje520
Contextual Info: Power Transistors TO-126 Case Continued Top View TYPE NO. •c (A) PD (W) MAX bvcbo BVCEO hi *E @ lc (V) 00 mm MIN MIN MAX (*BA) Bottom View VCE(SAT) 1C (V) (A) fT (MHz) NPN PUP MJE180 MJE170 3.0 15 60 40 50 250 100 0.3 0.5 50 MJE181 MJE171 3.0 15 80

MJE180

Abstract: MJE182 MJE181
Contextual Info: SavantIC Semiconductor Product Specification MJE180/181/182 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications PINNING see Fig.2

MJE170

Abstract: MJE171 MJE172
Contextual Info: SavantIC Semiconductor Product Specification MJE170/171/172 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type MJE180/181/182 APPLICATIONS ·For low power audio amplifier and low current, high speed switching applications

JE170

Abstract: JE172 transistor mje 170 W1JE172 MBD5300 MJE170 MJE171 MJE172 MJE180 MJE181
Contextual Info: MJE170, MJE171, MJE172, MJE180, MJE181, MJE182 E L E C T R IC A L C H A R A C T E R IS T IC S I continued ( T q = 2 5 ° C unless o th e rw is e noted) Characteristic | Sym b ol | M in I M ax I Um 7 OFF C H A R A C T E R IS T IC S Collector-Emitter Sustaining Voltage

MJE170

Abstract: MJE171 MJE172
Contextual Info: Inchange Semiconductor Product Specification MJE170/171/172 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type MJE180/181/182 APPLICATIONS ・For low power audio amplifier and low current high speed switching applications