MI31T Search Results

ML309

Abstract: M151 MI31T MI31TA MI32T MI32TA MI37T MI38T MI51T MIB37T
Contextual Info: Infrared Emitting Diodes TYPEE p A.p V f MAX 2 6 1/2 NO. nm TYP (mW) (mA) (V) (mA) MI31T MI31TA 940 880 0.5 2.8 20 20 1.6 1.8 20 20 MI32T MI32TA 940 880 0.5 2.8 20 20 1.6 1.8 MI37T MIB37T 940 940 2.0 2.0 20 20 MI38T MIB38T 940 940 2.0 2.0 MI51T M151 TA 940

MI31T

Abstract: MI31TA MIB31TA
Contextual Info: MI31TA CRO DESCRIPTION MI31T & MIB31TA are GaAlAs infrared emitting diode molded in 3.2mm diameter clear transparent lens. r 5.3 0 .21 INFRARED EMITTING DIODE 03.15 (0.124) -N\ % 1.0(0 ,04)-f 0.75(0.03) max. • • • All dimension .in mm(inch) No Scale

MI31T

Abstract: MI31TA MIB31TA oh140
Contextual Info: MI31T MI31TA INFRARED EMITTING DIODE DESCRIPTION MI31T & M3B31TA are GaAlAs infrared emitting diode molded in 3.2mm diameter clear transparent lens. 03.15 5.3 0 .21 t_ Y (0.124) (L % 1.0(0.04)-) 0.75(0,03)_j max. Ail dimension .in mm(inch) No Scale Toi. : +/-0.3mm

MI31T

Abstract: MI31TA MIB31TA Diode BAY 45
Contextual Info: MI31T MI31TA CRO INFRARED EMITTING DIODE DESCRIPTION ML31T & MIB31TA are GaAlAs infrared emitting diode molded in 3.2mm diameter clear transparent lens. 03.15 0.124 r 5.3 ( . ) 0 21 1.0(0 % ,04)-f -N\ 0.75(0.03) max. • • • A ll dim ension .in mm(inch)

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

Contextual Info: Blinking LED TYPE NO. MOGB517W SOURCE COLOUR Xp IV MIN Bin (m c d ) 630 565 10 5 IF=20mA 2.0 ~ 10 10 700 660 660 630 640 2.5 300 50 60 60 3 3 3 3 3 1.6 ~ 3.5 1.6 ~ 3.5 565 35 3 Orange Green VF (V) OPERATING VOLTAGE (V) PULSE RATE (Hz) 0.8-1.9 VIEWING ANGLE

ML309

Contextual Info: MICRO ELECTRONICS LTD SIE D • bOT17flfi GOÜ1G1S TTH ■ MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE p Àp V TYP mW (mA) f MAX (V) 1 2 01/2 1 PACKAGE CASE 35 35 03.2mm 0.69" lead 1-5 20 20 35 35 T-1 standard 03.0mm 1-43 2.0 2.0 100 100 30 18 03.0mm flangeless

MEL78

Abstract: MI31T MIB31T
Contextual Info: MEL78 NPN SILICON PHOTO TRANSISTOR D E S C R IPT IO N MEL78 is NPN silicon planar phototransistor. It features illumination sensitivity, ultra high 03.15 0.124 fast response time. MEL78 is spectrally and mechanically 5.3 All dimension in mm(tnch) No Scale

ML309

Contextual Info: Infrared Emitting Diodes 2 0 Vi degree PACKAGE CASE NO. 20 20 35 35 0 3.2mm 0.69" lead 1-4 1.6 1.8 20 20 35 35 T-l standard 0 3.0mm 1-61 20 20 2.0 2.0 100 100 30 18 0 3.0mm flangeless 1-7 1-8 2.0 2.0 20 20 2.0 2.0 100 100 30 20 0 3.0mm flangeless low profile lens