MGFS48B2122 Search Results

MGFS48B2122 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MGFS48B2122		Mitsubishi	2.11 - 2.17 GHz BAND 60W GaAs FET	Original	PDF	229.7KB	2

MGFS48B2122 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: < L/S band internally matched power GaAs FET > MGFS48B2122 2.11 – 2.17 GHz BAND / 60W 20.4±0.2 DESCRIPTION OUTLINE The MGFS48B2122 is a 60W push-pull type GaAs power FET especially designed for use in 2.11 – 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees	Original	MGFS48B2122 MGFS48B2122 17GHz 17GHz	PDF
Contextual Info: < L/S band internally matched power GaAs FET > MGFS48B2122 2.11 – 2.17 GHz BAND / 60W 20.4±0.2 DESCRIPTION OUTLINE The MGFS48B2122 is a 60W push-pull type GaAs power FET especially designed for use in 2.11 – 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees	Original	MGFS48B2122 MGFS48B2122 17GHz 17GHz	PDF
F217 Abstract: MGFS48B2122 GAAS FET AMPLIFIER 1115a Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET DESCRIPTION OUTLINE 20.4±0.2 The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees	Original	MGFS48B2122 MGFS48B2122 17GHz 17GHz 25deg 22dBm 39dBm F217 GAAS FET AMPLIFIER 1115a	PDF
GAAS FET AMPLIFIER Abstract: Band Power GaAs FET "GaAs FET" 60W 12V flammable RF push pull power amplifier MGFS48B2122 39dBm F217 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET ' 6&5,37,21 OUTLINE r The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees	Original	MGFS48B2122 MGFS48B2122 17GHz 17GHz 25deg 22dBm 39dBm GAAS FET AMPLIFIER Band Power GaAs FET "GaAs FET" 60W 12V flammable RF push pull power amplifier 39dBm F217	PDF
E 212 fet Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> v<é fâ a ip MGFS48B2122 2.1 - 2.2 GHZ BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees	OCR Scan	MGFS48B2122 MGFS48B2122 12GHz 25deg 12GHz E 212 fet	PDF
F217 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48B2122 2.11 - 2.17 GHz BAND 60W GaAs FET DESCRIPTION OUTLINE 20.4±0.2 The MGFS48B2122 is a 60W push-pull type GaAs Power FET especially designed for use in 2.11 - 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees	Original	MGFS48B2122 MGFS48B2122 17GHz 17GHz 25deg 22dBm 39dBm F217	PDF