MGFC40V6472A Search Results
MGFC40V6472A Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| MGFC40V6472A |
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6.4-7.2 GHz BAND 10W Internally Matched GaAs FET | Scan | 99.09KB | 2 |
MGFC40V6472A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V6472 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC40V6472 MGFC40V6472A Item-51] 10MHz | |
MGFC40V6472AContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> c 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic |
Original |
MGFC40V6472A Item-51] 10MHz | |
GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Abstract: 6 ghz amplifier 10w MGFC40V6472 MGFC40V6472A GF-18 Gaas Power Amplifier 10W
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Original |
MGFC40V6472 MGFC40V6472A Item-51] 10MHz June/2004 GAAS FET AMPLIFIER f 10Mhz to 2 GHz 6 ghz amplifier 10w MGFC40V6472 GF-18 Gaas Power Amplifier 10W |