MG50Q6ES51A Search Results
MG50Q6ES51A Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MG50Q6ES51A |
|
GTR Module Silicon N Channel IGBT | Scan | 275.63KB | 7 | ||
| MG50Q6ES51A |
|
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) | Scan | 275.62KB | 7 |
MG50Q6ES51A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: TOSHIBA MG50Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q6ES51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT |
OCR Scan |
MG50Q6ES51A | |
ksh 200 TRANSISTOR equivalent
Abstract: MG50Q6ES51 MG50Q6ES51A KSH 200 TRANSISTOR
|
OCR Scan |
MG50Q6ES51A MG50Q6ES51 2-108E2A 961001EAA1 ksh 200 TRANSISTOR equivalent MG50Q6ES51A KSH 200 TRANSISTOR | |
|
Contextual Info: T O SH IB A MG50Q6ES51A TOSHIBA GTR MODULE •WB ^M i MF «F SILICON N CHANNEL IGBT ta MF MF ■ » ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. |
OCR Scan |
MG50Q6ES51A 961001EAA1 |