MBRAF360T3G Search Results
MBRAF360T3G Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MBRAF360T3G | On Semiconductor | MBRAF360 - DIODE RECTIFIER DIODE, Rectifier Diode | Original | 99.19KB | 5 |
MBRAF360T3G Price and Stock
onsemi MBRAF360T3GSchottky Rect, Aec-Q101, 60V, Sod128Fl; Available Until Stocks Are Exhausted |Onsemi MBRAF360T3G |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBRAF360T3G | Tape & Reel | 1 |
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MBRAF360T3G | 13 |
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MBRAF360T3G | 13,130 |
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MBRAF360T3G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay |
Original |
mbraf360t3gmbraf360/d | |
|
Contextual Info: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay |
Original |
mbraf360t3gmbraf360/d | |
|
Contextual Info: MBRAF360T3G, NRVBAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay |
Original |
mbraf360t3gnrvbaf360t3gmbraf360/d |