MBR860 Search Results

DS30030

Abstract: 4b42
Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

Contextual Info: MBR860MFS, NRVB860MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting

Contextual Info: MBR 860 SCHOTTKY DIE SPECIFICATION TYPE: MBR860 RSingle □Dual Anode General Description: 60 V 8 A ( Low Ir) ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV

MBR830

Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
Contextual Info: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

Contextual Info: MBR820 THRU MBR860 肖特基二极管 Schottky Rectifier •特征 ■外形尺寸和印记 Features ● Io 8A ● VRRM 20V-60V ● 耐正向浪涌电流能力高 High surge current capability ● 封装：模压塑料 Cases: Molded plastic TO-220AC .412 10.5

Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

MBR830

Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
Contextual Info: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR860

Abstract: MBR850
Contextual Info: MBR850 thru MBR860 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR850 MBR860 VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics 8 A

Contextual Info: SIYU MBR830 MBR860 Schottky Barrier Rectifier Reverse Voltage 30 to 60 V Forward Current Single 4.0 A H I rJEËH 30— 60V JEfôÉJL(J£if )4 .0 A ¡ItfiE Features_ • o High Current Capability • IEft,Ek|#'iS;= Low Forward Voltage Drop

MBR860

Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR860 Single Anode General Description: 60 V 8 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

Contextual Info: SUZHOU GOOD-ARK ELECTRONIC CO., LTD 苏州固锝电子股份有限公司 Product Specification GOODARK Type MBR860,MBRF860 Construction : : Schottky Barrier Rectifier Application : For General Purpose （Manufacturer）: Suzhou Goodark Electronics Co.,Ltd

SR10100

Abstract: MBR10100 MBR1035 MBR1045 MBR1050 MBR1060 MBR835 MBR845 MBR850 MBR860
Contextual Info: Schottky Barrier Rectifiers Part No. CrossReference MBR835 - MBR845 - MBR850 - MBR860 Operating Temperature: -65o C to 125 o C Max. Average Rectified Current Peak Inverse Voltage lo A PIV(V) Peak Fwd. Surge Current @ 8.3 ms Superimposed lFSM (A) 35 8.0 A

MBR830

Abstract: MBR845 MBR850 MBR860 MBR830-MBR860 DS30030
Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

MBR850

Abstract: MBR860
Contextual Info: MBR850 thru MBR860 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR850 MBR860 VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics 8 A

Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

Contextual Info: LITE ON POWER SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR830

Abstract: MBR835 MBR840 MBR845 MBR850 MBR860
Contextual Info: LITE-ON SEMICONDUCTOR MBR830 thru MBR860 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency

MBR860ULPS

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MBR860ULPS Features Halogen free available upon request by adding suffix "-HF" Low forward voltage drop Super long operating life

Contextual Info: SUZHOU GOOD-ARK ELECTRONIC CO., LTD 苏州固锝电子股份有限公司 Product Specification GOODARK Type MBR860,MBRF860 Construction : : Schottky Barrier Rectifier Application : For General Purpose （Manufacturer）: Suzhou Goodark Electronics Co.,Ltd

R845

Abstract: resistance R845 MBR830 MBR860 BR830-M 30-ME
Contextual Info: MBR830 - MBR860 VISHAY 8.0A SCHOTTKY BARRIER RECTIFIER y LITEMZI POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

Contextual Info: MBR830 - MBR860 8.0A SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency TO-22QAC Lh High Surge Capability High Current Capability and Low Forward

SB1245

Abstract: 5000 MBR15120 RB521S-30DP
Contextual Info: TM Micro Commercial Components SCHOTTKY BARRIER RECTIFIERS MCC Part Number Average Forward Current Working Peak @ Half-Wave Reverse Voltage Resistive Load 60Hz Forward Peak Surge Current @ 8.3mS Superimposed Maximum Reverse Current @ VRWM Maximum Forward Voltage

MBR8100

Abstract: MBR830 MBR840 MBR850 MBR860 MBR880
Contextual Info: MBR830 thru MBR8100 REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 8.0 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES ●Metal of silicon rectifier , majority carrier conduction .108 2.75 ●Guard ring for transient protection .187(4.7) .148(3.8)

diac kr 206

Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Contextual Info: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com