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MB85RC04V Datasheets (1)

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Fujitsu

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MB85RC04VPNF-G-JNERE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 4KBIT 1MHZ 8SOP	Original	PDF		36

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RAMXEED MB85RC04VPNF-G-AMERE2 IC FRAM 4KBIT I2C 1MHZ 8SOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB85RC04VPNF-G-AMERE2	Cut Tape	428		1	1 $1.72 10 $1.61 100 $1.50 1000 $1.42 10000 $1.42	Buy Now
Mouser Electronics	MB85RC04VPNF-G-AMERE2		872			1 $1.72 10 $1.62 100 $1.50 1000 $1.37 10000 $1.32	Buy Now
RAMXEED MB85RC04VPNF-G-JNE1 IC FRAM 4KBIT I2C 8SOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB85RC04VPNF-G-JNE1	Tube			760	1 - 10 - 100 - 1000 $1.12 10000 $1.12	Buy Now
Arrow Electronics	MB85RC04VPNF-G-JNE1		2		4	1 - 10 $0.84 100 $0.83 1000 $0.81 10000 $0.81	Search Findchips
RAMXEED MB85RC04VPNF-G-JNERE1 IC FRAM 4KBIT I2C 1MHZ 8SOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB85RC04VPNF-G-JNERE1	Tape & Reel			1,500	1 - 10 - 100 - 1000 - 10000 $1.09	Buy Now
RAMXEED MB85RC04VPNF-G-AME2 F-RAM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MB85RC04VPNF-G-AME2		475			1 $1.72 10 $1.62 100 $1.50 1000 $1.36 10000 $1.30	Buy Now
Rutronik	MB85RC04VPNF-G-AME2	Tray	476		476	1 - 10 - 100 - 1000 $1.03 10000 $0.94	Buy Now
FUJITSU Limited MB85RC04VPNF-G-JNE1 FRAM, 4KBIT, I2C, SOP-8; Memory Type:FRAM; Memory Size:4Kbit; NVRAM Memory Configuration:512 x 8bit; IC Interface Type:I2C; Access Time:-; Memory Case Style:SOP; No. of Pins:8Pins; Supply Voltage Min:3V; Supply Voltage Max:5.5V; RoHS Compliant: Yes
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	MB85RC04VPNF-G-JNE1	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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MB85RC04V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MB85RC04V Abstract: RC04V Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00016-1v0-E Memory FRAM 4 K 512 x 8 Bit I2C MB85RC04V • DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00016-1v0-E MB85RC04V MB85RC04V RC04V	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00016-2v0-E Memory FRAM 4 K 512 x 8 Bit I2C MB85RC04V • DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00016-2v0-E MB85RC04V MB85RC04V	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00016-0v01-E Memory FRAM 4 K 512 x 8 Bit I2C MB85RC04V • DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00016-0v01-E MB85RC04V MB85RC04V	PDF
DS501 Abstract: RC04V Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00016-2v0-E Memory FRAM 4 K 512 x 8 Bit I2C MB85RC04V • DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00016-2v0-E MB85RC04V MB85RC04V DS501 RC04V	PDF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00016-3v0-E Memory FRAM 4 K 512 x 8 Bit I2C MB85RC04V • DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00016-3v0-E MB85RC04V MB85RC04V	PDF
RC04V Abstract: MB85RC04V MB85RC04VPNF-G-JNE1 0-A10 3n wp MB85RC04VPNF MB85RC04VPNF-G-JNERE1 Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00016-0v02-E Memory FRAM 4 K 512 x 8 Bit I2C MB85RC04V • DESCRIPTION The MB85RC04V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 512 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00016-0v02-E MB85RC04V MB85RC04V RC04V MB85RC04VPNF-G-JNE1 0-A10 3n wp MB85RC04VPNF MB85RC04VPNF-G-JNERE1	PDF