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    MA3X555 Search Results

    MA3X555 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MA3X555
    Panasonic Silicon epitaxial planar type Original PDF 43.87KB 2
    MA3X555
    Panasonic Diode Original PDF 53.9KB 3
    MA3X555
    Panasonic Silicon Epitaxial Planar Type PIN Diode Original PDF 46.69KB 3

    MA3X555 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MA555

    Abstract: MA3X555
    Contextual Info: PIN Diodes MA3X555 MA555 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Symbol Rating Unit Reverse voltage (DC) VR 40 V Peak reverse voltage VRM 45 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Operating ambient temperature Topr


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    MA3X555 MA555) MA555 MA3X555 PDF

    MA3X555

    Abstract: MA555
    Contextual Info: PIN diodes MA3X555 MA555 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.16+0.10 –0.06 2.8+0.2 –0.3 1.50+0.25 –0.05 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original
    MA3X555 MA555) MA3X555 MA555 PDF

    MA3X555

    Abstract: MA555
    Contextual Info: PIN diodes MA3X555 MA555 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 2 1 (0.65) • Small diode capacitance CD • Large variable range of forward dynamic resistance rf


    Original
    MA3X555 MA555) MA3X555 MA555 PDF

    Contextual Info: PIN diodes MA3X555 MA555 Silicon epitaxial planar type Unit: mm For UHF and SHF bands AGC 0.40+0.10 –0.05 0.16+0.10 –0.06 2.8+0.2 –0.3 1.50+0.25 –0.05 5˚ M Di ain sc te on na tin nc ue e/ d • Small diode capacitance CD • Large variable range of forward dynamic resistance rf


    Original
    MA3X555 MA555) PDF

    MA3X555

    Abstract: marking M2H TA100-F
    Contextual Info: PIN Diodes MA3X555 Silicon epitaxial planar type Rating Unit Reverse voltage DC VR 40 V Peak reverse voltage VRM 45 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg


    Original
    MA3X555 MA3X555 marking M2H TA100-F PDF

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE PDF

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 PDF