LT2301A Search Results
LT2301A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LT2301AContextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V |
Original |
LT2301A 300us, 2007-Ver3 OT-23 | |
LT2301AContextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V |
Original |
LT2301A 2007-Ver3 | |
|
Contextual Info: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V |
Original |
LT2301A 300us, OT-23 |