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    LP1N06C Price and Stock

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    HARTING Technology Group RLP1N06CLER4390

    1 A, 55 V, 0.750 OHM, VOLTAGE CLAMPING, CURRENT LIMITED, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 3A I(D), 55V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    ComSIT USA RLP1N06CLER4390 7,516
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    onsemi MLP1N06CLG

    Power Field-Effect Transistor, 2.75A I(D), 59V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    Vyrian MLP1N06CLG 8,269
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    LP1N06C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOTOROLA O rd e r th is d o c u m e n t b y M LP1N06C L/D SEMICONDUCTOR TECHNICAL DATA SMARTDISCRETES Internally Clamped, Current Limited N-Channel Logic Level Power MOSFET These SM ARTD ISCR ETES devices feature current limiting for short circuit protection, an integral g a te -to -s o u rc e clamp for ESD protection and g a te -to -d ra in


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    LP1N06C MLP1N06CL/D PDF