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DIM250PHM33-TL000 Abstract: DIM250PHM33-TL Contextual Info: DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 LN30665 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	DIM250PHM33-TL000 DS6116-1 LN30665) DIM250PHM33-TL000 DIM250PHM33-TL	PDF
Contextual Info: DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 LN30665 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	DIM250PHM33-TL000 DS6116-1 LN30665)	PDF

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DIM250PHM33-TL000

Abstract: DIM250PHM33-TL
Contextual Info: DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 LN30665 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT

Original

DIM250PHM33-TL000 DS6116-1 LN30665) DIM250PHM33-TL000 DIM250PHM33-TL

PDF

Contextual Info: DIM250PHM33-TL000 Half Bridge IGBT Module DS6116-1 July 2013 LN30665 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT

Original

DIM250PHM33-TL000 DS6116-1 LN30665)

PDF