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Catalog Datasheet	Type	Document Tags	PDF
DIM800XSM33-F000 Abstract: DS5906-1 power transistor 1802 Contextual Info: DIM800XSM33-F000 Single Switch IGBT Module Replaces DS5906-1.2 DS5906-2 August 2011 LN28652 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	DIM800XSM33-F000 DS5906-1 DS5906-2 LN28652) DIM800XSM33-F000 power transistor 1802	PDF
Contextual Info: DIM800XSM33-F000 Single Switch IGBT Module Replaces DS5906-1.2 DS5906-2 August 2011 LN28652 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	DIM800XSM33-F000 DS5906-1 DS5906-2 LN28652)	PDF

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DIM800XSM33-F000

Abstract: DS5906-1 power transistor 1802
Contextual Info: DIM800XSM33-F000 Single Switch IGBT Module Replaces DS5906-1.2 DS5906-2 August 2011 LN28652 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

Original

DIM800XSM33-F000 DS5906-1 DS5906-2 LN28652) DIM800XSM33-F000 power transistor 1802

PDF

Contextual Info: DIM800XSM33-F000 Single Switch IGBT Module Replaces DS5906-1.2 DS5906-2 August 2011 LN28652 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

Original

DIM800XSM33-F000 DS5906-1 DS5906-2 LN28652)

PDF