KDS5670 Search Results

KDS5670 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
KDS5670		Kexin	60V N-Channel PowerTrench MOSFET	Original	PDF	60.32KB	2
KDS5670		TY Semiconductor	60V N-Channel PowerTrench MOSFET - SOP-8	Original	PDF	347.49KB	2

KDS5670 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
smd 1C Abstract: 1b smd transistor smd diode JC Contextual Info: IC IC SMD Type 60V N-Channel PowerTrenchTM MOSFET KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability	Original	KDS5670 smd 1C 1b smd transistor smd diode JC	PDF
Contextual Info: IC IC MOSFET SMD Type Product specification KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability	Original	KDS5670	PDF

Catalog Datasheet

Type

Document Tags

PDF

smd 1C

Abstract: 1b smd transistor smd diode JC
Contextual Info: IC IC SMD Type 60V N-Channel PowerTrenchTM MOSFET KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability

Original

KDS5670 smd 1C 1b smd transistor smd diode JC

PDF

Contextual Info: IC IC MOSFET SMD Type Product specification KDS5670 Features 10 A, 60 V. RDS ON = 0.014 @ VGS = 10 V RDS(ON) = 0.017 @ VGS = 6 V Low gate charge Fast switching speed. High performance trench technology for extremely low RDS(ON) High power and current handling capability

Original

KDS5670

PDF