JUL08 Search Results

Contextual Info: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . C O P Y R IG H T REUEASED BY ^ C O EU E C TR O N IC S C O R P O R A T IO N . FO R AUU P U B U IC A T IO N R IG H T S REV IS IO N S RESERVED. LTR D E S C R IP T IO N DATE O' REVISED PER ECO-C >15877 01 JUL08

Contextual Info: RELEASED FOR PUBLICATION LOC A L L RIGHTS RESERVED. D IST ES BY TYCO ELECTRONICS CORPORATION. COPYRIGHT REVISIONS 00 P LTR ^ ^ DESCRIPTION A E C R —0 8 —0 1 9 7 2 1 -DATE DWN 0 1 JUL08 A.L APVD CO THIS DRAWING IS UNPU BLISH ED . NOTES: A M A T E R IAL:

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . C O P Y R IG H T BY ^ C O RELEASED E L E C T R O N IC S C O R P O R A T IO N . FO R ALL 2 P U B L IC A T IO N R IG H T S R E V IS IO N S 50 RESERVED. LTR D E S C R IP T IO N REVISED PER DATE DWN 11 JUL08

3 phase IGBT gate driver 6ED003L06-F

Abstract: 3 phase IGBT gate driver AN-GateDriver-6ED003L06-1 HLG05506 6ED003L06-F 3 phase gate driver
Contextual Info: Data sheet, Rev. 2, July 2008 6ED003L06-F Integrated 3 Phase Gate Driver Power Management & Drives N e v e r s t o p t h i n k i n g 6ED003L06-F Integrated 3 Phase Gate Driver 6ED003L06-F Revision History: Previous Version: Page 8-12 13 2008-07 Rev. 2 1.8

94v0 ys

Contextual Info: ASK21363-* SHEET 1 OF 1 POSITRONIO ASIA PTE. LTD. BELIEVES THE DATA ON THE DRAWING TO BE RELIABLE. SIN C E THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE U SER EM PLO YS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIO A SIA PTE. LTD. A S SU M E S NO

L1084DG

Abstract: L1084G L1084SG l1084 DSA006124 TO-252 pin out L1084S3G L1084XG l1084tg L1084S
Contextual Info: NIKO-SEM L1084XG 5A Adjustable Low Dropout Linear Regulator LDO TO-252, 263, 220 Lead-Free GENERAL DESCRIPTION FEATURES The L1084G is a positive and low dropout three-terminal voltage regulator with 5A output current capability. This device is designed for use in low voltage applications that

Contextual Info: zn: I _a_ F ile N o. SHEET 640 ILL S P E C IF IC A T IO N C u rre n t Rating: 1.5A V olta g e Rating: 125V AC RMS C o n ta c t R e sista n ce :4 5 M illio h m s Max. Insulation R e sista n ce : 10OOM egohm s M in@ 500V DC D ie le ctric W ithstanding: 10 0 0 V AC RMS 6 0 H z 1 M iinute

Contextual Info: ASK21394-* SHEET 1 OF 1 POSITRONIC ASIA PTE. LTD. BELIEVES THE DATA ON THE DRAWING TO BE RELIABLE. SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC ASIA PTE. LTD. ASSUMES NO

Contextual Info: T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL 2003 C O P Y R IG H T by tto o E L E C T R O N IC S P U B L IC A T IO N R IG H T S DEC , 2 0 0 3 . REVISIONS RESERVED. E C O R P O R A T IO N . LTR NOTES: C 1 / 4 ”—3 6 U N S A \ SIN G LE

AO4498L

Abstract: ao4498
Contextual Info: AO4498L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4498L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.

Contextual Info: UNITED CHEMI-CON U N ITE D CH EMI- CON CUSTOMER: CUSTOMER PN: GLOBAL PN: CONTROL NO.: TECHNICAL DATA SHEET DIMENSIONAL CRITERIA X mm in EKMH201VNN102MA35S 199680 ELECTRICAL CRITERIA CAPACITANCE 120Hz/20°C : CAP.TOLERANCE: 1000 F ± 20 % RATED VDC SURGE VDC (30 sec):

Contextual Info: BFP620F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Small package 1.4 x 0.8 x 0.59 mm 2 4 • Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain TSFP-4

94v0 ys

Contextual Info: ASK21355-* SHEET 1 OF 1 POSITRONIO ASIA PTE. LTD. BELIEVES THE DATA ON THE DRAWING TO BE RELIABLE. SIN C E THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE U SER EM PLO YS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIO A SIA PTE. LTD. A S SU M E S NO

94v0 ys

Contextual Info: ASK21372-* SHEET 1 OF 1 POSITRONIO ASIA PTE. LTD. BELIEVES THE DATA ON THE DRAWING TO BE RELIABLE. SIN C E THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE U SER EM PLO YS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIO A SIA PTE. LTD. A S SU M E S NO

Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement

Contextual Info: Six-Sigma Methodologies Support Back-End Yield and Quality Metrics Improvement Tom Hand, Jennifer Welborn, and Jim Oerth Skyworks Solutions, 20 Sylvan Road, Woburn, MA 01801 Tom.Hand@Skyworksinc.com 781 376-3539 Keywords: … Backend Process Visual Yield Six Sigma

Contextual Info: RoHS COMPLIANT Electrical Characteristics Nominal Impedance: Frequency Range: VSWR: Insertion Loss: Operating Voltage rms : Dielectric Withstand Voltage (rms): Contact Resistance: Insulation Resistance: 50 ohms DC to 11 GHz 1.35:1 maximum 0.17 dB MAX 1500 V maximum at sea level

546B

Contextual Info: 1 _a_ I File No. zn: I SHEET 640 ILL SPECIFICATION Insulation Resistance: 1000 M egaohm s Min. Withstand Voltage:1000V AC/Minute Durability:600 Mating Cirles Min. lnsulator:PBT,UL 94V — 0 Pin:Phosphor Bronze, Gold Plated Over Nickel Shielding:Copper Alloy.Nickel Plated

LS753

Abstract: LS100 LS150 LS50 LS75
Contextual Info: INNOVATION SOLUTIONS SUPPORT RELIABILITY High MTBF up to 700 000 hours Superior operating temperature performance up to 70 °C Very High efficiency up to 87% Very Low Cost Compact Withstands 300VAC surges 5s Three Year Warranty LS Series Key Market Segments & Applications

transistor t2F

Abstract: 68fl
Contextual Info: Philips Semiconductors Product specification PNP switching transistor PMST2907A FEATURES PINNING • Low current max. 200 mA PIN DESCRIPTION • Low voltage (max. 60 V). 1 2 emitter APPLICATIONS 3 collector base • Medium power switching • General purpose amplification.

SEM 2004

Abstract: p-channel mosfet Field Effect Transistor P6503NJ niko-sem
Contextual Info: NIKO-SEM P6503NJ N- & P-Channel Enhancement Mode Field Effect Transistor TSOPJW-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID N-Channel 30 65mΩ 4A P-Channel -30 150mΩ -3A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

bf494

Abstract: BF495 transistor transistor BF494 bf494 TRANSISTOR bf495 TRANSISTOR BF495 transistors bf494
Contextual Info: Philips Semiconductors Product specification NPN medium frequency transistors FEATURES BF494; BF495 PINNING • Low current max. 30 mA PIN • Low voltage (max. 20 V). 1 base 2 em itter 3 collector APPLICATIONS DESCRIPTION • HF applications in radio and television receivers

Contextual Info: ASK21305-* SHEET 1 OF 1 POSITRONIC ASIA PTE. LTD. BELIEVES THE DATA ON THE DRAWING TO BE RELIABLE. SINCE THE TECHNICAL DATE REV REVISION RECORD DRN CKD APP EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC ASIA PTE. LTD. ASSUMES NO 16 Jan 08

Contextual Info: zn: I _a_ File No. SHEET 64 0 _LZi_ SPECIFICATION 2 -0 3 .1 5 - 3 .0 5 4 -0 1 .0 2 Housing:Thermoplastic UL94V—0 Contact:Copper Alloy,Selective Gold Plated In Contact Area Shield:Copper Alloy,Nickel Plated Pin Not Electrically Connected Maybe Omitted See

CMA 001 24

Abstract: 082 Brass Material
Contextual Info: 4 T H IS D R AW IN G IS U N P U B L IS H E D . R E LE A S E D FO R P U B LIC A TIO N BY TYCO ELEC TR O N IC S CO RPO RATIO N. C O PYR IG H T 2 3 LOC R EVISIO N S D IS T .0 ALL INTERNATIONAL RIGHTS R ESERVED . D E S C R IP T IO N DWN REVISED PER E C R - 0 8 - 0 1 6 7 6 6