IXYP20N65C3D1 Search Results
IXYP20N65C3D1 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXYP20N65C3D1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 650V 18A 50W TO220 | Original | 252.06KB | |||
IXYP20N65C3D1M |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 18A 50W TO220 | Original | 6 |
IXYP20N65C3D1 Price and Stock
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IXYS Corporation IXYP20N65C3D1IGBT PT 650V 50A TO-220-3 |
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IXYP20N65C3D1 | Tube | 1,511 | 1 |
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IXYP20N65C3D1 | 736 |
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IXYP20N65C3D1 | 287 | 18 |
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IXYP20N65C3D1 | 287 | 1 |
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IXYS Corporation IXYP20N65C3D1MIGBT PT 650V 18A TO-220-3 |
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IXYP20N65C3D1M | Tube |
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IXYP20N65C3D1M |
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IXYP20N65C3D1M | 1 |
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IXYP20N65C3D1M | 216 |
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Littelfuse Inc IXYP20N65C3D1Trans IGBT Chip N-CH 650V 50A 200W 3-Pin(3+Tab) TO-220AB |
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IXYP20N65C3D1 | 110 | 4 |
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IXYP20N65C3D1 | Bulk | 420 | 1 |
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Littelfuse Inc IXYP20N65C3D1MDisc Igbt Xpt-Genx3 To-220Ab/Fp/ Tube |Littelfuse IXYP20N65C3D1M |
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IXYP20N65C3D1M | Bulk | 300 |
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IXYP20N65C3D1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Advance Technical Information IXYP20N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM |
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IXYP20N65C3D1M IC110 IF110 20N65C3 0-13-A | |
Contextual Info: Advance Technical Information IXYP20N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 20A 2.5V 28ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IXYP20N65C3D1 IC110 20-60kHz O-220 IF110 20N65C3 0-13-A |