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    IXTT10N100D Search Results

    IXTT10N100D Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTT10N100D
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A TO-268 Original PDF 5
    IXTT10N100D2
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A T0-267 Original PDF 5
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    IXTT10N100D Price and Stock

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    Littelfuse Inc IXTT10N100D

    MOSFET N-CH 1000V 10A TO268
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    DigiKey IXTT10N100D Tube
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    IXYS Corporation IXTT10N100D2

    MOSFET N-CH 1000V 10A TO268
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    Mouser Electronics IXTT10N100D2 300
    • 1 $21.49
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    TTI IXTT10N100D2 Tube 300
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    TME IXTT10N100D2 1
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    Littelfuse Inc IXTT10N100D2-TRL

    MOSFETs IXTT10N100D2-TRL
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    Littelfuse Inc IXTT10N100D2

    Discmosfet N-Ch Depl Mode-D2 To-268Aa/ Tube |Littelfuse IXTT10N100D2
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    Newark IXTT10N100D2 Bulk 300
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    IXYS Corporation IXTT10N100D

    Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
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    TME IXTT10N100D 1
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    New Advantage Corporation IXTT10N100D 22 1
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    IXTT10N100D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXTT10N100D

    Abstract: 10N100 IXTH10N100D siemens relay rg DS99529A
    Contextual Info: Preliminary Technical Information IXTH10N100D IXTT10N100D High Voltage MOSFETs VDSX ID25 = = ≤ RDS on 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH10N100D IXTT10N100D O-268 100ms 10N100D 3-31-09-B IXTT10N100D 10N100 IXTH10N100D siemens relay rg DS99529A PDF

    IXTH10N100D2

    Contextual Info: Advance Technical Information IXTH10N100D2 IXTT10N100D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH10N100D2 IXTT10N100D2 O-247 O-268 O-247) O-247 100ms 100ms 10N100D2 PDF

    Contextual Info: IXTH10N100D IXTT10N100D High Voltage MOSFETs VDSX ID25 RDS on = = ≤ 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G S Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSX


    Original     		IXTH10N100D IXTT10N100D O-268 O-247) O-268 O-247 IXTT10N100D IXTH10N100D 100ms PDF

    T10N100

    Contextual Info: Preliminary Technical Information High Voltage MOSFETs VDSX ID25 IXTH10N100D IXTT10N100D = = ≤ RDS on 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH10N100D IXTT10N100D O-268 100ms 10N100D 3-31-09-B T10N100 PDF

    Contextual Info: Advance Technical Information Depletion Mode MOSFETs VDSX ID on IXTH10N100D2 IXTT10N100D2 RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH10N100D2 IXTT10N100D2 O-247 O-247) O-268 100ms 10N100D2 PDF

    IXTH20N50D

    Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
    Contextual Info: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.


    Original     		IXI858/IXI859 00V/1000V O-247 O-268 O-251AA IXTH20N50D IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D PDF