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    IXTH4N100L

    Contextual Info: Advance Technical Information LinearTM Power MOSFET w/Extended FBSOA IXTH4N100L VDSS ID25 = 1000V = 4A  2.8  RDS on N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C


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    IXTH4N100L O-247 100ms 4N100L IXTH4N100L PDF