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IXYS Corporation IXTC96N25T MOSFET N-CH ISOPLUS220
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IXTC96N25T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
96N25T Contextual Info: Preliminary Technical Information IXTC96N25T Trench Gate Power MOSFET VDSS ID25 = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	IXTC96N25T ISOPLUS220 E153432 96N25T 0-11-07-A	PDF
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTC96N25T = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	IXTC96N25T ISOPLUS220 E153432 96N25T 0-11-07-A	PDF

Catalog Datasheet

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96N25T

Contextual Info: Preliminary Technical Information IXTC96N25T Trench Gate Power MOSFET VDSS ID25 = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C

Original

IXTC96N25T ISOPLUS220 E153432 96N25T 0-11-07-A

PDF

Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET VDSS ID25 IXTC96N25T = 250V = 40A Ω ≤ 31mΩ Electrically Isolated Back Surface RDS(on) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C

Original

IXTC96N25T ISOPLUS220 E153432 96N25T 0-11-07-A

PDF